Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. / Medina-Bailon, Cristina; Padilla, José L.; Sadi, Toufik; Sampedro, Carlos; Godoy, Andrés; Donetti, Luca; Georgiev, Vihar P.; Gámiz, Francisco; Asenov, Asen.

julkaisussa: IEEE Transactions on Electron Devices, Vuosikerta 66, Nro 3, 8618336, 01.03.2019, s. 1145-1152.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Medina-Bailon, C, Padilla, JL, Sadi, T, Sampedro, C, Godoy, A, Donetti, L, Georgiev, VP, Gámiz, F & Asenov, A 2019, 'Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices' IEEE Transactions on Electron Devices, Vuosikerta. 66, Nro 3, 8618336, Sivut 1145-1152. https://doi.org/10.1109/TED.2019.2890985

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Author

Medina-Bailon, Cristina ; Padilla, José L. ; Sadi, Toufik ; Sampedro, Carlos ; Godoy, Andrés ; Donetti, Luca ; Georgiev, Vihar P. ; Gámiz, Francisco ; Asenov, Asen. / Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices. Julkaisussa: IEEE Transactions on Electron Devices. 2019 ; Vuosikerta 66, Nro 3. Sivut 1145-1152.

Bibtex - Lataa

@article{8da8437200304536b709cfca1462a87d,
title = "Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices",
abstract = "Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.",
keywords = "Band-to-band tunneling (BTBT), Direct source-to-drain tunneling (S/D tunneling), Double-gate silicon on insulator (DGSOI), FinFET, Fully depleted silicon on insulator (FDSOI), Gate leakage current, Multissubband ensemble Monte Carlo (MS-EMC)",
author = "Cristina Medina-Bailon and Padilla, {Jos{\'e} L.} and Toufik Sadi and Carlos Sampedro and Andr{\'e}s Godoy and Luca Donetti and Georgiev, {Vihar P.} and Francisco G{\'a}miz and Asen Asenov",
note = "| openaire: EC/H2020/662175/EU//WAYTOGO-FAST",
year = "2019",
month = "3",
day = "1",
doi = "10.1109/TED.2019.2890985",
language = "English",
volume = "66",
pages = "1145--1152",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "3",

}

RIS - Lataa

TY - JOUR

T1 - Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

AU - Medina-Bailon, Cristina

AU - Padilla, José L.

AU - Sadi, Toufik

AU - Sampedro, Carlos

AU - Godoy, Andrés

AU - Donetti, Luca

AU - Georgiev, Vihar P.

AU - Gámiz, Francisco

AU - Asenov, Asen

N1 - | openaire: EC/H2020/662175/EU//WAYTOGO-FAST

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.

AB - Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.

KW - Band-to-band tunneling (BTBT)

KW - Direct source-to-drain tunneling (S/D tunneling)

KW - Double-gate silicon on insulator (DGSOI)

KW - FinFET

KW - Fully depleted silicon on insulator (FDSOI)

KW - Gate leakage current

KW - Multissubband ensemble Monte Carlo (MS-EMC)

UR - http://www.scopus.com/inward/record.url?scp=85062274548&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2890985

DO - 10.1109/TED.2019.2890985

M3 - Article

VL - 66

SP - 1145

EP - 1152

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

M1 - 8618336

ER -

ID: 32502961