Multisubband ensemble Monte Carlo analysis of tunneling leakage mechanisms in ultrascaled FDSOI, DGSOI, and FinFET devices

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Cristina Medina-Bailon
  • José L. Padilla
  • Dr Toufik Sadi

  • Carlos Sampedro
  • Andrés Godoy
  • Luca Donetti
  • Vihar P. Georgiev
  • Francisco Gámiz
  • Asen Asenov

Organisaatiot

  • University of Glasgow
  • Instituto Carlos I de Física Teórica y Computacional

Kuvaus

Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an appropriate way. This paper presents the modeling and implementation of direct source-to-drain tunneling (S/D tunneling), gate leakage mechanisms (GLMs) accounting for both direct tunneling and trap-assisted tunneling, and nonlocal band-to-band tunneling (BTBT) phenomena in a multissubband ensemble Monte Carlo (MS-EMC) simulator along with their simultaneous application for the study of ultrascaled fully depleted silicon-on-insulator, double-gate silicon-on-insulator, and FinFET devices. We find that S/D tunneling is the prevalent phenomena for the three devices, and it is increasingly relevant for short-channel lengths.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli8618336
Sivut1145-1152
Sivumäärä8
JulkaisuIEEE Transactions on Electron Devices
Vuosikerta66
Numero3
TilaJulkaistu - 1 maaliskuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 32502961