Multiscale modeling of charge trapping in molecule based flash memories

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

  • Oves Badami
  • Toufik Sadi
  • Vihar Georgiev
  • Fikru Adamu-Lema
  • Vasanthan Thirunavukkarasu
  • Jie Ding
  • Asen Asenov

Organisaatiot

  • University of Glasgow
  • Taiyuan University of Technology

Kuvaus

To keep up with the increase in demand for storing data, flash memories have been scaled down dramatically and stacked by the semiconductor industry. Furthermore, processing large data has highlighted the limitations of the von Neumann architecture. To overcome this, different types of memory devices like Resistive Random-Access Memories (RRAMs) have also gained a lot of importance. Hence, carrier dynamics in oxides has gained significant traction in recent years. In this work, we discuss the kinetic Monte Carlo methodology as implemented in our integrated simulation environment NESS (Nano-Electronic Simulation Software) that allows us to study carrier transport in the oxide using accurate physics based models. As an example, we study the retention characteristics in a molecule based flash memory.

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
ToimittajatFrancesco Driussi
TilaJulkaistu - 1 syyskuuta 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Simulation of Semiconductor Processes and Devices - Udine, Italia
Kesto: 4 syyskuuta 20196 syyskuuta 2019
Konferenssinumero: 24

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
LyhennettäSISPAD
MaaItalia
KaupunkiUdine
Ajanjakso04/09/201906/09/2019

Lataa tilasto

Ei tietoja saatavilla

ID: 38650494