MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • University of Tsukuba
  • Massachusetts Institute of Technology
  • Institute of Electronic Materials Technology

Kuvaus

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut50-56
Sivumäärä7
JulkaisuJournal of Crystal Growth
Vuosikerta487
TilaJulkaistu - 1 huhtikuuta 2018
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 18124280