MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

M. Sopanen; T. Koljonen; H. Lipsanen

MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

M. Sopanen
, T. Koljonen
, H. Lipsanen

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	Espoo
Sivut	25-26
Tila	Julkaistu - 1994
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	Optoelectronics Laboratory, Annual Report 1993
Kustantaja	TKK
Numero	TKK-F-C160

Tutkimusalat

movpe, GaInAsSb, metalorganic vapour phase epitaxy

Siteeraa tätä

@techreport{7125604dd5e94eb8ade03b0e459f505e,

title = "MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source",

keywords = "movpe, GaInAsSb, metalorganic vapour phase epitaxy, movpe, GaInAsSb, metalorganic vapour phase epitaxy, movpe, GaInAsSb, metalorganic vapour phase epitaxy",

author = "M. Sopanen and T. Koljonen and H. Lipsanen",

year = "1994",

language = "English",

series = "Optoelectronics Laboratory, Annual Report 1993",

publisher = "TKK",

number = "TKK-F-C160",

pages = "25--26",

type = "WorkingPaper",

institution = "TKK",

}

TY - UNPB

T1 - MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

AU - Sopanen, M.

AU - Koljonen, T.

AU - Lipsanen, H.

PY - 1994

Y1 - 1994

KW - movpe, GaInAsSb, metalorganic vapour phase epitaxy

M3 - Working paper

T3 - Optoelectronics Laboratory, Annual Report 1993

SP - 25

EP - 26

BT - MOVPE growth of GaInAsSb using tertiarybutylarsine as arsenic source

CY - Espoo

ER -