Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Ashley E. Morishige; Friedemann D. Heinz; Hannu S. Laine; Jonas Schon; Wolfram Kwapil; Barry Lai; Hele Savin; Martin C. Schubert; Tonio Buonassisi

doi:10.1109/JPHOTOV.2018.2869544

Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Ashley E. Morishige
, Friedemann D. Heinz
, Hannu S. Laine
, Jonas Schon
, Wolfram Kwapil
, Barry Lai
, Hele Savin
, Martin C. Schubert
, Tonio Buonassisi

Massachusetts Institute of Technology
Alber-Ludwigs-Universität Freiburg
Argonne National Academy
Fraunhofer Institute for Solar Energy Systems

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

Alkuperäiskieli	Englanti
Sivut	1525 - 1530
Sivumäärä	6
Julkaisu	IEEE Journal of Photovoltaics
Vuosikerta	8
Numero	6
DOI - pysyväislinkit	https://doi.org/10.1109/JPHOTOV.2018.2869544
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

YK:n kestävän kehityksen tavoitteet

Tämä tuotos edistää seuraavia kestävän kehityksen tavoitteita:

SDG 7 – Edullinen ja puhdas energia

Pääsy asiakirjaan

10.1109/JPHOTOV.2018.2869544

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Link to publication in Scopus

1 Päättynyt

Riddle of light induced degradation in silicon photovoltaics
Savin, H. (Vastuullinen johtaja), Vähänissi, V. (Projektin jäsen), Huang, H. (Projektin jäsen), Nampalli, N. (Projektin jäsen), Lindroos, J. (Projektin jäsen), von Gastrow, G. (Projektin jäsen), Vahlman, H. (Projektin jäsen), Inglese, A. (Projektin jäsen), Laine, H. (Projektin jäsen), Rauha, I. (Projektin jäsen), Modanese, C. (Projektin jäsen), Serue, M. (Projektin jäsen) & Yli-Koski, M. (Projektin jäsen)
01/12/2012 → 31/12/2017
Projekti: EU: ERC grants

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@article{5898de4c8446426ea09c5d1cb4ae309f,

title = "Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon",

abstract = "N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.",

keywords = "Charge carrier lifetime, Correlative microscopy, Iron, micro-photolumine-scence (\&\#x03BC;-PL), micro-X-ray fluorescence (\&\#x03BC;-XRF), n-type, Photovoltaic cells, Photovoltaic systems, precipitate, Silicon, silicon, synchrotron",

author = "Morishige, \{Ashley E.\} and Heinz, \{Friedemann D.\} and Laine, \{Hannu S.\} and Jonas Schon and Wolfram Kwapil and Barry Lai and Hele Savin and Schubert, \{Martin C.\} and Tonio Buonassisi",

note = "| openaire: EC/FP7/307315/EU//SOLARX",

year = "2018",

doi = "10.1109/JPHOTOV.2018.2869544",

language = "English",

volume = "8",

pages = "1525 -- 1530",

journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE",

number = "6",

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TY - JOUR

T1 - Moving Beyond p-Type mc-Si

T2 - Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

AU - Morishige, Ashley E.

AU - Heinz, Friedemann D.

AU - Laine, Hannu S.

AU - Schon, Jonas

AU - Kwapil, Wolfram

AU - Lai, Barry

AU - Savin, Hele

AU - Schubert, Martin C.

AU - Buonassisi, Tonio

N1 - | openaire: EC/FP7/307315/EU//SOLARX

PY - 2018

Y1 - 2018

N2 - N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

AB - N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.

KW - Charge carrier lifetime

KW - Correlative microscopy

KW - Iron

KW - micro-photolumine-scence (μ-PL)

KW - micro-X-ray fluorescence (μ-XRF)

KW - n-type

KW - Photovoltaic cells

KW - Photovoltaic systems

KW - precipitate

KW - Silicon

KW - silicon

KW - synchrotron

UR - https://www.scopus.com/pages/publications/85053620118

U2 - 10.1109/JPHOTOV.2018.2869544

DO - 10.1109/JPHOTOV.2018.2869544

M3 - Article

AN - SCOPUS:85053620118

SN - 2156-3381

VL - 8

SP - 1525

EP - 1530

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

ER -

Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon

Abstrakti

YK:n kestävän kehityksen tavoitteet

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

Riddle of light induced degradation in silicon photovoltaics

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