Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Tutkimustuotos: Lehtiartikkeli

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Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs. / Kivisaari, Pyry; Sadi, Toufik; Oksanen, Jani; Tulkki, Jukka.

julkaisussa: Optical and Quantum Electronics, Vuosikerta 48, Nro 2, 154, 01.02.2016, s. 1-6.

Tutkimustuotos: Lehtiartikkeli

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Bibtex - Lataa

@article{a9af8f1f6a1b4fa491b47110f2045cbe,
title = "Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs",
abstract = "Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.",
keywords = "Hot carriers, III–Nitride LEDs, Monte Carlo simulations, Non-equilibrium hole distribution",
author = "Pyry Kivisaari and Toufik Sadi and Jani Oksanen and Jukka Tulkki",
year = "2016",
month = "2",
day = "1",
doi = "10.1007/s11082-016-0406-4",
language = "English",
volume = "48",
pages = "1--6",
journal = "Optical and Quantum Electronics",
issn = "0306-8919",
number = "2",

}

RIS - Lataa

TY - JOUR

T1 - Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

AU - Kivisaari, Pyry

AU - Sadi, Toufik

AU - Oksanen, Jani

AU - Tulkki, Jukka

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

AB - Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

KW - Hot carriers

KW - III–Nitride LEDs

KW - Monte Carlo simulations

KW - Non-equilibrium hole distribution

UR - http://www.scopus.com/inward/record.url?scp=84957593800&partnerID=8YFLogxK

U2 - 10.1007/s11082-016-0406-4

DO - 10.1007/s11082-016-0406-4

M3 - Article

VL - 48

SP - 1

EP - 6

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 2

M1 - 154

ER -

ID: 1590593