Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Lund University
  • University of Glasgow

Kuvaus

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli154
Sivut1-6
Sivumäärä6
JulkaisuOptical and Quantum Electronics
Vuosikerta48
Numero2
TilaJulkaistu - 1 helmikuuta 2016
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 1590593