Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

M. Mattila; M. Sopanen; H. Lipsanen

doi:10.1063/1.1994021

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

M. Mattila^*
, M. Sopanen
, H. Lipsanen

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

Alkuperäiskieli	Englanti
Otsikko	Physics of Semiconductors, Parts A and B
Toimittajat	J Menendez, CG VanDeWalle
Kustantaja	American Institute of Physics
Sivut	117-118
Sivumäärä	2
ISBN (painettu)	0735402574
DOI - pysyväislinkit	https://doi.org/10.1063/1.1994021
Tila	Julkaistu - 2005
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on the Physics of Semiconductors - Flagstaff, Yhdysvallat Kesto: 26 heinäk. 2004 → 30 heinäk. 2004 Konferenssinumero: 27

Julkaisusarja

Nimi	AIP Conference Proceedings
Kustantaja	AIP
Vuosikerta	772
ISSN (painettu)	0094-243X

Conference

Conference	International Conference on the Physics of Semiconductors
Lyhennettä	ICPS
Maa/Alue	Yhdysvallat
Kaupunki	Flagstaff
Ajanjakso	26/07/2004 → 30/07/2004

Pääsy asiakirjaan

10.1063/1.1994021

Muut tiedostot ja linkit

Link to publication in Scopus

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@inproceedings{fe0b92d48a31498d9617bc9dd653b21b,

title = "Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers",

abstract = "The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.",

author = "M. Mattila and M. Sopanen and H. Lipsanen",

year = "2005",

doi = "10.1063/1.1994021",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings ",

publisher = "American Institute of Physics",

pages = "117--118",

editor = "J Menendez and \{VanDeWalle \}, \{CG \}",

booktitle = "Physics of Semiconductors, Parts A and B",

address = "United States",

note = "International Conference on the Physics of Semiconductors , ICPS ; Conference date: 26-07-2004 Through 30-07-2004",

}

Mattila, M, Sopanen, M & Lipsanen, H 2005, Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers. julkaisussa J Menendez & CG VanDeWalle (toim), Physics of Semiconductors, Parts A and B. AIP Conference Proceedings , Vuosikerta 772, American Institute of Physics, Sivut 117-118, International Conference on the Physics of Semiconductors , Flagstaff, Arizona, Yhdysvallat, 26/07/2004. https://doi.org/10.1063/1.1994021

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers. / Mattila, M.; Sopanen, M.; Lipsanen, H.
Physics of Semiconductors, Parts A and B. toim. / J Menendez; CG VanDeWalle . American Institute of Physics, 2005. s. 117-118 (AIP Conference Proceedings ; Vuosikerta 772).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

AU - Mattila, M.

AU - Sopanen, M.

AU - Lipsanen, H.

N1 - Conference code: 27

PY - 2005

Y1 - 2005

N2 - The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

AB - The impact of ultra-thin MOVPE grown InP layers on the surface morphology of GaAs(100) was studied in the InP/GaAs material system which is used to produce self-organized quantum dots through the Stranski-Krastanow (SK) growth mode. Temperature and InP coverage dependent 2D and 3D morphology regimes were discovered. At low temperatures the sample morphology remained 2D for all InP coverages up to the SK transition. Two dimensional morphology was achieved at higher temperatures only for samples with more than a complete monolayer of InP. Group V atom exchange during sample cooling was found to cause the morphology transition at smaller InP coverages.

UR - https://www.scopus.com/pages/publications/33749469995

U2 - 10.1063/1.1994021

DO - 10.1063/1.1994021

M3 - Conference article in proceedings

AN - SCOPUS:33749469995

SN - 0735402574

T3 - AIP Conference Proceedings

SP - 117

EP - 118

BT - Physics of Semiconductors, Parts A and B

A2 - Menendez, J

A2 - VanDeWalle , CG

PB - American Institute of Physics

T2 - International Conference on the Physics of Semiconductors

Y2 - 26 July 2004 through 30 July 2004

ER -

Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

Abstrakti

Julkaisusarja

Conference

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