Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Sivut	118-118
Tila	Julkaistu - 2005
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	AIP Conference Proceedings 772

Tutkimusalat

@techreport{32e334d8f24c448bbc166198c4dd1fad,

title = "Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers",

keywords = "exchange reaction, GaAs, InP, morphology, exchange reaction, GaAs, InP, morphology, exchange reaction, GaAs, InP, morphology",

author = "Marco Mattila and Markku Sopanen and Harri Lipsanen",

year = "2005",

language = "English",

series = "AIP Conference Proceedings 772",

pages = "118--118",

type = "WorkingPaper",

}

TY - UNPB

T1 - Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

AU - Mattila, Marco

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2005

Y1 - 2005

KW - exchange reaction

KW - GaAs

KW - InP

KW - morphology

KW - exchange reaction

KW - GaAs

KW - InP

KW - morphology

KW - exchange reaction

KW - GaAs

KW - InP

KW - morphology

M3 - Working paper

T3 - AIP Conference Proceedings 772

SP - 118

EP - 118

BT - Modulation of GaAs(100) surface morphology by ultra-thin MOVPE grown InP layers

ER -