Modeling of charge and photon transport in coupled intracavity light emitters

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

Organisaatiot

  • Lund University

Kuvaus

To enable a more detailed analysis of our recent studies of intracavity double diode structures (DDSs), new simulation tools are needed. Such simulation models must account for both charge and photon transport in the studied structures, consisting of optically coupled AlGaAs/GaAs double heterojunction light emitting diode (LED) and GaAs p-n-homojunction photodiode (PD) structure, enclosed within a single semiconductor cavity. We apply the drift-diffusion formalism for charge transport and an optical model coupling the LED and the PD, with the aim of complementing our experimental work on the efficiency of these devices to understand better their suitability for electroluminescence cooling [1], and shedding further light on electroluminescence and optical energy transfer in the structures.

Yksityiskohdat

AlkuperäiskieliEnglanti
Otsikko2017 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
TilaJulkaistu - 11 elokuuta 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Numerical Simulation of Optoelectronic Devices - Copenhagen, Tanska
Kesto: 24 heinäkuuta 201728 heinäkuuta 2017
Konferenssinumero: 17

Conference

ConferenceInternational Conference on Numerical Simulation of Optoelectronic Devices
LyhennettäNUSOD
MaaTanska
KaupunkiCopenhagen
Ajanjakso24/07/201728/07/2017

ID: 15179382