Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala; Ville Havu; Filip Tuomisto; Martti J. Puska

doi:10.1103/PhysRevB.88.235201

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

Ville Virkkala^*
, Ville Havu
, Filip Tuomisto
, Martti J. Puska

^*Tämän työn vastaava kirjoittaja

Teknillisen fysiikan laitos

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

22 Sitaatiot (Scopus)

262 Lataukset (Pure)

Abstrakti

We suggested recently that the band-gap narrowing in dilute GaAs _1-xN_x alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

Alkuperäiskieli	Englanti
Artikkeli	235201
Sivut	1-6
Sivumäärä	6
Julkaisu	Physical Review B
Vuosikerta	88
Numero	23
DOI - pysyväislinkit	https://doi.org/10.1103/PhysRevB.88.235201
Tila	Julkaistu - 5 jouluk. 2013
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1103/PhysRevB.88.235201

PhysRevB.88.235201Final published version, 751 KB

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title = "Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys",

abstract = "We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the {\^a}{\OE}",

author = "Ville Virkkala and Ville Havu and Filip Tuomisto and Puska, \{Martti J.\}",

year = "2013",

month = dec,

day = "5",

doi = "10.1103/PhysRevB.88.235201",

language = "English",

volume = "88",

pages = "1--6",

journal = "Physical Review B",

issn = "1098-0121",

publisher = "American Physical Society",

number = "23",

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T1 - Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

AU - Virkkala, Ville

AU - Havu, Ville

AU - Tuomisto, Filip

AU - Puska, Martti J.

PY - 2013/12/5

Y1 - 2013/12/5

N2 - We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

AB - We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒ

UR - https://www.scopus.com/pages/publications/84890640452

U2 - 10.1103/PhysRevB.88.235201

DO - 10.1103/PhysRevB.88.235201

M3 - Article

AN - SCOPUS:84890640452

SN - 1098-0121

VL - 88

SP - 1

EP - 6

JO - Physical Review B

JF - Physical Review B

IS - 23

M1 - 235201

ER -

Modeling Bi-induced changes in the electronic structure of GaAs 1-xBix alloys

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