Minimum-Energy Point Design in FDSOI Regular-V-t

Lauri Koskinen; Markus Hiienkari; Matthew Turnquist; Philippe Flatresse

doi:10.1109/S3S.2015.7333516

Minimum-Energy Point Design in FDSOI Regular-V-t

Lauri Koskinen^*, Markus Hiienkari, Matthew Turnquist, Philippe Flatresse

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Abstrakti

FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.

Alkuperäiskieli	Englanti
Otsikko	2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)
Kustantaja	IEEE
Sivumäärä	2
ISBN (painettu)	978-1-5090-0259-7
DOI - pysyväislinkit	https://doi.org/10.1109/S3S.2015.7333516
Tila	Julkaistu - 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - Rohnert Park, Kanada Kesto: 5 lokak. 2015 → 8 lokak. 2015

Conference

Conference	IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Lyhennettä	S3S
Maa/Alue	Kanada
Kaupunki	Rohnert Park
Ajanjakso	05/10/2015 → 08/10/2015

Pääsy asiakirjaan

10.1109/S3S.2015.7333516

Muut tiedostot ja linkit

http://ieeexplore.ieee.org/document/7333516/

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@inproceedings{d67e9e5a5b874065b457fde9fa636ca6,

title = "Minimum-Energy Point Design in FDSOI Regular-V-t",

abstract = "FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.",

author = "Lauri Koskinen and Markus Hiienkari and Matthew Turnquist and Philippe Flatresse",

year = "2015",

doi = "10.1109/S3S.2015.7333516",

language = "English",

isbn = "978-1-5090-0259-7",

booktitle = "2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)",

publisher = "IEEE",

address = "United States",

note = "IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference , S3S ; Conference date: 05-10-2015 Through 08-10-2015",

}

TY - GEN

T1 - Minimum-Energy Point Design in FDSOI Regular-V-t

AU - Koskinen, Lauri

AU - Hiienkari, Markus

AU - Turnquist, Matthew

AU - Flatresse, Philippe

PY - 2015

Y1 - 2015

N2 - FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.

AB - FDSOI has been shown to achieve extremely high performance at low operating voltages: a use-case extremely well suited for applications such as mobile processing. In IoT and Dark Silicon, use cases with extremely low application active times per standby times can be found. Investigated here are the turnover points where the higher threshold voltage and longer channel length options of FDSOI should be used. It was found that for activity factors below 3.2% to 0.5%, depending on the voltage, the Regular V-T option of FDSOI should be used.

UR - http://ieeexplore.ieee.org/document/7333516/

U2 - 10.1109/S3S.2015.7333516

DO - 10.1109/S3S.2015.7333516

M3 - Conference article in proceedings

SN - 978-1-5090-0259-7

BT - 2015 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)

PB - IEEE

T2 - IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference

Y2 - 5 October 2015 through 8 October 2015

ER -

Minimum-Energy Point Design in FDSOI Regular-V-t

Abstrakti

Conference

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

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