Mid-long wavelength infrared absorptance of hyperdoped silicon via femtosecond laser microstructuring

Haibin Sun, Xiaolong Liu, Li Zhao, Jianxin Jia, Changhui Jiang, Jiamin Xiao, Yuwei Chen, Long Xu, Zhiyong Duan, Peng Rao, Shengli Sun

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

5 Sitaatiot (Scopus)
62 Lataukset (Pure)

Abstrakti

Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3–16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M–LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M–LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.
AlkuperäiskieliEnglanti
Sivut1808-1817
Sivumäärä10
JulkaisuOptics Express
Vuosikerta30
Numero2
DOI - pysyväislinkit
TilaJulkaistu - 17 tammik. 2022
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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