Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition

Tutkimustuotos: Lehtiartikkeli

Standard

Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition. / Hagen, D. J.; Tripathi, T. S.; Terasaki, I.; Karppinen, M.

julkaisussa: Semiconductor Science and Technology, Vuosikerta 33, Nro 11, 115015, 16.10.2018.

Tutkimustuotos: Lehtiartikkeli

Harvard

APA

Vancouver

Author

Bibtex - Lataa

@article{c61e79d544ca4c38807e658b7299c2f5,
title = "Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition",
abstract = "High-quality ultrathin films of the p-type wide bandgap semiconductor NiO are potentially interesting candidates for a number of frontier applications. Here we have fabricated a series of NiO thin films with a precise thickness control by atomic layer deposition from Ni-bis(2,2,6,6-tetramethyl-3,5-heptanedionate) and O3 precursors. While randomly oriented polycrystalline films were obtained on glass and Si substrates, epitaxial growth was achieved on sapphire, SrTiO3 and MgO single crystals. Optical energy gaps were determined from UV-vis absorption spectra for the films grown on borosilicate glass, and found to decrease with decreasing film thickness. This observation is in contrast to the expected bandgap increase through quantum confinement, but can be explained by an increased Coulomb interaction. Furthermore, NiO films doped with Co, Cu and Mn were deposited. Electrical measurements showed that the doping has a much higher impact on the two-probe resistance than on the resistivity. A likely explanation is a change of the contact resistance by a change of hole density.",
keywords = "ALD, NiO, optical band gap, p-type semiconductor, thickness dependence, thin film",
author = "Hagen, {D. J.} and Tripathi, {T. S.} and I. Terasaki and M. Karppinen",
year = "2018",
month = "10",
day = "16",
doi = "10.1088/1361-6641/aae2e9",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "11",

}

RIS - Lataa

TY - JOUR

T1 - Microstructure and optical properties of ultra-thin NiO films grown by atomic layer deposition

AU - Hagen, D. J.

AU - Tripathi, T. S.

AU - Terasaki, I.

AU - Karppinen, M.

PY - 2018/10/16

Y1 - 2018/10/16

N2 - High-quality ultrathin films of the p-type wide bandgap semiconductor NiO are potentially interesting candidates for a number of frontier applications. Here we have fabricated a series of NiO thin films with a precise thickness control by atomic layer deposition from Ni-bis(2,2,6,6-tetramethyl-3,5-heptanedionate) and O3 precursors. While randomly oriented polycrystalline films were obtained on glass and Si substrates, epitaxial growth was achieved on sapphire, SrTiO3 and MgO single crystals. Optical energy gaps were determined from UV-vis absorption spectra for the films grown on borosilicate glass, and found to decrease with decreasing film thickness. This observation is in contrast to the expected bandgap increase through quantum confinement, but can be explained by an increased Coulomb interaction. Furthermore, NiO films doped with Co, Cu and Mn were deposited. Electrical measurements showed that the doping has a much higher impact on the two-probe resistance than on the resistivity. A likely explanation is a change of the contact resistance by a change of hole density.

AB - High-quality ultrathin films of the p-type wide bandgap semiconductor NiO are potentially interesting candidates for a number of frontier applications. Here we have fabricated a series of NiO thin films with a precise thickness control by atomic layer deposition from Ni-bis(2,2,6,6-tetramethyl-3,5-heptanedionate) and O3 precursors. While randomly oriented polycrystalline films were obtained on glass and Si substrates, epitaxial growth was achieved on sapphire, SrTiO3 and MgO single crystals. Optical energy gaps were determined from UV-vis absorption spectra for the films grown on borosilicate glass, and found to decrease with decreasing film thickness. This observation is in contrast to the expected bandgap increase through quantum confinement, but can be explained by an increased Coulomb interaction. Furthermore, NiO films doped with Co, Cu and Mn were deposited. Electrical measurements showed that the doping has a much higher impact on the two-probe resistance than on the resistivity. A likely explanation is a change of the contact resistance by a change of hole density.

KW - ALD

KW - NiO

KW - optical band gap

KW - p-type semiconductor

KW - thickness dependence

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=85055333518&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aae2e9

DO - 10.1088/1361-6641/aae2e9

M3 - Article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115015

ER -

ID: 29222318