Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

J. Gebauer; M. Lausmann; T.E.M. Staab; R. Krause-Rehberg; M. Hakala; M.J. Puska

doi:10.1103/PhysRevB.60.1464

Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

J. Gebauer
, M. Lausmann
, T.E.M. Staab
, R. Krause-Rehberg
, M. Hakala
, M.J. Puska

Teknillisen fysiikan laitos

Martin Luther University Halle-Wittenberg

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

33 Sitaatiot (Scopus)

215 Lataukset (Pure)

Abstrakti

Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

Alkuperäiskieli	Englanti
Sivut	1464-1467
Sivumäärä	4
Julkaisu	Physical Review B
Vuosikerta	60
Numero	3
DOI - pysyväislinkit	https://doi.org/10.1103/PhysRevB.60.1464
Tila	Julkaistu - 15 heinäk. 1999
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1103/PhysRevB.60.1464

PhysRevB.60.1464Final published version, 69,1 KB

Siteeraa tätä

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title = "Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs",

abstract = "Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.",

author = "J. Gebauer and M. Lausmann and T.E.M. Staab and R. Krause-Rehberg and M. Hakala and M.J. Puska",

year = "1999",

month = jul,

day = "15",

doi = "10.1103/PhysRevB.60.1464",

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T1 - Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

AU - Gebauer, J.

AU - Lausmann, M.

AU - Staab, T.E.M.

AU - Krause-Rehberg, R.

AU - Hakala, M.

AU - Puska, M.J.

PY - 1999/7/15

Y1 - 1999/7/15

N2 - Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

AB - Native vacancies in Te-doped (5×1016–5×1018cm−3)GaAs were investigated by means of positron lifetime and Doppler-broadening coincidence spectroscopy. The experimental data were related to theoretical calculations of the positron lifetime and the annihilation momentum distribution. Monovacancies were observed in all Te-doped GaAs samples under study. It will be shown that they can directly be identified to be Ga-vacancy–TeAs-donor complexes. These complexes are the dominating type of vacancy defects in the doping range under observation.

U2 - 10.1103/PhysRevB.60.1464

DO - 10.1103/PhysRevB.60.1464

M3 - Article

SN - 2469-9950

VL - 60

SP - 1464

EP - 1467

JO - Physical Review B

JF - Physical Review B

IS - 3

ER -

Microscopic identification of native donor Ga-vacancy complexes in Te-doped GaAs

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