Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions. / Pekola, J. P.; Manninen, A. J.; Leivo, M. M.; Arutyunov, K.; Suoknuuti, J. K.; Suppula, T. I.; Collaudin, B.

julkaisussa: Physica B: Condensed Matter, Vuosikerta 280, Nro 1-4, 11.05.2000, s. 485-490.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Pekola, JP, Manninen, AJ, Leivo, MM, Arutyunov, K, Suoknuuti, JK, Suppula, TI & Collaudin, B 2000, 'Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions', Physica B: Condensed Matter, Vuosikerta. 280, Nro 1-4, Sivut 485-490. https://doi.org/10.1016/S0921-4526(99)01842-6

APA

Pekola, J. P., Manninen, A. J., Leivo, M. M., Arutyunov, K., Suoknuuti, J. K., Suppula, T. I., & Collaudin, B. (2000). Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions. Physica B: Condensed Matter, 280(1-4), 485-490. https://doi.org/10.1016/S0921-4526(99)01842-6

Vancouver

Pekola JP, Manninen AJ, Leivo MM, Arutyunov K, Suoknuuti JK, Suppula TI et al. Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions. Physica B: Condensed Matter. 2000 touko 11;280(1-4):485-490. https://doi.org/10.1016/S0921-4526(99)01842-6

Author

Pekola, J. P. ; Manninen, A. J. ; Leivo, M. M. ; Arutyunov, K. ; Suoknuuti, J. K. ; Suppula, T. I. ; Collaudin, B. / Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions. Julkaisussa: Physica B: Condensed Matter. 2000 ; Vuosikerta 280, Nro 1-4. Sivut 485-490.

Bibtex - Lataa

@article{7a207bee513949d39e70f6ac835127f7,
title = "Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions",
abstract = "A solid-state refrigeration method at sub-kelvin temperatures has been developed. It is based on quasiparticle tunnelling between a superconductor and a normal metal, or, between two dissimilar superconducting metals. The refrigerator is fabricated by combining nanolithography and micromachining methods. This technique has been demonstrated in both electron cooling from 0.3 to 0.1 K and in refrigeration of a dielectric platform. We describe a new fabrication method of tunnel junctions in a shadow evaporation configuration using a mechanical mask of silicon nitride.",
author = "Pekola, {J. P.} and Manninen, {A. J.} and Leivo, {M. M.} and K. Arutyunov and Suoknuuti, {J. K.} and Suppula, {T. I.} and B. Collaudin",
year = "2000",
month = "5",
day = "11",
doi = "10.1016/S0921-4526(99)01842-6",
language = "English",
volume = "280",
pages = "485--490",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier Science B.V.",
number = "1-4",

}

RIS - Lataa

TY - JOUR

T1 - Microrefrigeration by quasiparticle tunnelling in NIS and SIS junctions

AU - Pekola, J. P.

AU - Manninen, A. J.

AU - Leivo, M. M.

AU - Arutyunov, K.

AU - Suoknuuti, J. K.

AU - Suppula, T. I.

AU - Collaudin, B.

PY - 2000/5/11

Y1 - 2000/5/11

N2 - A solid-state refrigeration method at sub-kelvin temperatures has been developed. It is based on quasiparticle tunnelling between a superconductor and a normal metal, or, between two dissimilar superconducting metals. The refrigerator is fabricated by combining nanolithography and micromachining methods. This technique has been demonstrated in both electron cooling from 0.3 to 0.1 K and in refrigeration of a dielectric platform. We describe a new fabrication method of tunnel junctions in a shadow evaporation configuration using a mechanical mask of silicon nitride.

AB - A solid-state refrigeration method at sub-kelvin temperatures has been developed. It is based on quasiparticle tunnelling between a superconductor and a normal metal, or, between two dissimilar superconducting metals. The refrigerator is fabricated by combining nanolithography and micromachining methods. This technique has been demonstrated in both electron cooling from 0.3 to 0.1 K and in refrigeration of a dielectric platform. We describe a new fabrication method of tunnel junctions in a shadow evaporation configuration using a mechanical mask of silicon nitride.

UR - http://www.scopus.com/inward/record.url?scp=0033897978&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)01842-6

DO - 10.1016/S0921-4526(99)01842-6

M3 - Article

AN - SCOPUS:0033897978

VL - 280

SP - 485

EP - 490

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -

ID: 4435795