Metastable antisite pair in GaAs

S. Pöykkö; M. J. Puska; R. M. Nieminen

Metastable antisite pair in GaAs

S. Pöykkö^*
, M. J. Puska
, R. M. Nieminen

^*Tämän työn vastaava kirjoittaja

Teknillisen fysiikan laitos

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

Abstrakti

Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.

Alkuperäiskieli	Englanti
Sivut	969-974
Sivumäärä	6
Julkaisu	Materials Science Forum
Vuosikerta	258-263
Tila	Julkaistu - 1997
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

@article{8aef9ef93e6d48e59b6f26b44fa05218,

title = "Metastable antisite pair in GaAs",

abstract = "Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.",

keywords = "Antisite defects, Gallium arsenide, Metastability",

author = "S. P{\"o}ykk{\"o} and Puska, \{M. J.\} and Nieminen, \{R. M.\}",

year = "1997",

language = "English",

volume = "258-263",

pages = "969--974",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Metastable antisite pair in GaAs

AU - Pöykkö, S.

AU - Puska, M. J.

AU - Nieminen, R. M.

PY - 1997

Y1 - 1997

N2 - Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.

AB - Metastable arsenic-antisite-gallium-antisite pair in GaAs has been studied using self-consistent, parameter-free total energy methods. The metastability of this defect is similar to that of the isolated arsenic-antisite. The anti-structure pair has ionization levels in the band gap in the metastable configuration, unlike the isolated arsenic-antisite. These ionization levels enable absorption of infrared light in the metastable state. The results presented are in good agreement with recent experimental results for electron-irradiated GaAs.

KW - Antisite defects

KW - Gallium arsenide

KW - Metastability

UR - https://www.scopus.com/pages/publications/3743135235

M3 - Article

AN - SCOPUS:3743135235

SN - 0255-5476

VL - 258-263

SP - 969

EP - 974

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Metastable antisite pair in GaAs

Abstrakti

Muut tiedostot ja linkit

Sormenjälki

Siteeraa tätä