Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Australian National University

Kuvaus

The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be ΔAB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli093101
JulkaisuApplied Physics Letters
Vuosikerta116
Numero9
TilaJulkaistu - 2 maaliskuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 41698099