Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen; Tuomas Haggren; Harri Lipsanen; Markku Sopanen

doi:10.1063/1.5134964

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen, Tuomas Haggren, Harri Lipsanen, Markku Sopanen

Australian National University

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

2 Sitaatiot (Scopus)

140 Lataukset (Pure)

Abstrakti

The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ_AB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.

Alkuperäiskieli	Englanti
Artikkeli	093101
Sivumäärä	4
Julkaisu	Applied Physics Letters
Vuosikerta	116
Numero	9
DOI - pysyväislinkit	https://doi.org/10.1063/1.5134964
Tila	Julkaistu - 2 maalisk. 2020
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1063/1.5134964

ELEC_Kauppinen_Metalorganic_vapor_APLFinal published version, 1,95 MB

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@article{b5a4cc450ecd4d82a3f75dccb6ab7bd7,

title = "Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN",

abstract = "The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be ΔAB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.",

author = "Christoffer Kauppinen and Tuomas Haggren and Harri Lipsanen and Markku Sopanen",

year = "2020",

month = mar,

day = "2",

doi = "10.1063/1.5134964",

language = "English",

volume = "116",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

AU - Kauppinen, Christoffer

AU - Haggren, Tuomas

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 2020/3/2

Y1 - 2020/3/2

N2 - The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be ΔAB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.

AB - The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be ΔAB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III–V growth on III-N materials for heterojunction devices.

U2 - 10.1063/1.5134964

DO - 10.1063/1.5134964

M3 - Article

SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093101

ER -

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

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