Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Guillaume von Gastrow; Eric Calle; Pablo Ortega; Ramon Alcubilla; Andreana  Daniil; Elias Z. Stutz; Anna Fontcuberta i Morral; Sebastian Husein; Tara Nietzold; Mariana Bertoni; Hele Savin

doi:10.1109/PVSC.2017.8366010

Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Guillaume von Gastrow, Eric Calle, Pablo Ortega, Ramon Alcubilla, Andreana Daniil, Elias Z. Stutz, Anna Fontcuberta i Morral, Sebastian Husein, Tara Nietzold, Mariana Bertoni, Hele Savin

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

159 Lataukset (Pure)

Abstrakti

We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

Alkuperäiskieli	Englanti
Otsikko	2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
Kustantaja	IEEE
Sivut	944-947
Sivumäärä	4
ISBN (elektroninen)	978-1-5090-5605-7
DOI - pysyväislinkit	https://doi.org/10.1109/PVSC.2017.8366010
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE Photovoltaic Specialists Conference - Washington, Yhdysvallat Kesto: 25 kesäk. 2017 → 30 kesäk. 2017 Konferenssinumero: 44

Conference

Conference	IEEE Photovoltaic Specialists Conference
Lyhennettä	PVSC
Maa/Alue	Yhdysvallat
Kaupunki	Washington
Ajanjakso	25/06/2017 → 30/06/2017

Pääsy asiakirjaan

10.1109/PVSC.2017.8366010

vonGastrow_et_al_bSi_metallization_IEEE_PVSC_2017Accepted author manuscript, 369 KB

BUILDING INFORMATION MODELLING FOR LEAN CONSTRUCTION
Paavola, J. (Vastuullinen tutkija)
01/01/2013 → 29/02/2016
Projekti: Business Finland: FiDiPro

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

von Gastrow, G., Calle, E., Ortega, P., Alcubilla, R., Daniil, A., Stutz, E. Z., Fontcuberta i Morral, A., Husein, S., Nietzold, T., Bertoni, M., & Savin, H. (2018). Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells. teoksessa 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) (Sivut 944-947). IEEE. https://doi.org/10.1109/PVSC.2017.8366010

@inproceedings{d691a7be71cb4d0fbfd43b4efa89f73b,

title = "Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells",

abstract = "We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.",

keywords = "black silicon, contact resistance, emitter, doping",

author = "{von Gastrow}, Guillaume and Eric Calle and Pablo Ortega and Ramon Alcubilla and Andreana Daniil and Stutz, {Elias Z.} and {Fontcuberta i Morral}, Anna and Sebastian Husein and Tara Nietzold and Mariana Bertoni and Hele Savin",

year = "2018",

doi = "10.1109/PVSC.2017.8366010",

language = "English",

pages = "944--947",

booktitle = "2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 25-06-2017 Through 30-06-2017",

}

von Gastrow, G, Calle, E, Ortega, P, Alcubilla, R, Daniil, A, Stutz, EZ, Fontcuberta i Morral, A, Husein, S, Nietzold, T, Bertoni, M & Savin, H 2018, Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells. julkaisussa 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) . IEEE, Sivut 944-947, IEEE Photovoltaic Specialists Conference, Washington, District of Columbia, Yhdysvallat, 25/06/2017. https://doi.org/10.1109/PVSC.2017.8366010

TY - GEN

T1 - Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

AU - von Gastrow, Guillaume

AU - Calle, Eric

AU - Ortega, Pablo

AU - Alcubilla, Ramon

AU - Daniil, Andreana

AU - Stutz, Elias Z.

AU - Fontcuberta i Morral, Anna

AU - Husein, Sebastian

AU - Nietzold, Tara

AU - Bertoni, Mariana

AU - Savin, Hele

N1 - Conference code: 44

PY - 2018

Y1 - 2018

N2 - We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

AB - We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.

KW - black silicon

KW - contact resistance

KW - emitter

KW - doping

U2 - 10.1109/PVSC.2017.8366010

DO - 10.1109/PVSC.2017.8366010

M3 - Conference article in proceedings

SP - 944

EP - 947

BT - 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)

PB - IEEE

T2 - IEEE Photovoltaic Specialists Conference

Y2 - 25 June 2017 through 30 June 2017

ER -

Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

Abstrakti

Conference

Pääsy asiakirjaan

Sormenjälki

Projektit

BUILDING INFORMATION MODELLING FOR LEAN CONSTRUCTION

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä