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Mechanosensing of Stimuli Changes with Magnetically Gated Adaptive Sensitivity

  • Fudan University
  • China University of Petroleum - Beijing

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

3 Sitaatiot (Scopus)
29 Lataukset (Pure)

Abstrakti

Inspired by biological sensors that characteristically adapt to varying stimulus ranges, efficiently detecting stimulus changes sooner than the absolute stimulus values, we propose a mechanosensing concept in which the resolution can be adapted by magnetic field (H) gating to detect small pressure-changes under a wide range of compressive stimuli. This is realized with resistive sensing by pillared H-driven assemblies of soft ferromagnetic electrically conducting particles between planar electrodes under a voltage bias. By modulation of H, the pillars respond with mechanically adaptable sensitivity. Higher H enhances current resolution, while it increases scatter among repeating measurements due to increased magnetic structural jamming between colloids in their assembly. To manage the trade-off between electrical resolution and scatter, machine learning is introduced for searching optimum H gatings, thus facilitating efficient pressure prediction. This approach suggests bioinspired pathways for developing adaptive stimulus-responsive mechanosensors, detecting subtle changes across varying stimuli levels with enhanced effectiveness through machine learning.

AlkuperäiskieliEnglanti
Sivut862-868
Sivumäärä7
JulkaisuACS Materials Letters
Vuosikerta7
Numero3
Varhainen verkossa julkaisun päivämäärä2025
DOI - pysyväislinkit
TilaJulkaistu - 3 maalisk. 2025
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

The authors acknowledge the facilities and technical support provided by Aalto University OtaNano - Nanomicroscopy Center. This work was supported by ERC (Advanced Grant DRIVEN and Dyna-Mat), the Academy of Finland (Nos. 321443, 352671, 355709, and Center of Excellence Program of Life-Inspired Hydride Materials, 346108), the China Scholarship Council (Nos. 202006710007 and 201906310146), and National Natural Science Foundation of China (No. 22478423).

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