Mechanistic investigation of ZnO nanowire growth

Tutkimustuotos: Lehtiartikkeli

Tutkijat

Organisaatiot

  • VTT Technical Research Centre of Finland
  • Kemerovo State University, USSR

Kuvaus

ZnO nanowire (NW) growth mechanism was investigated in a nonvapor and noncatalytic approach for the controlled NW synthesis in a second time scale. The experimental results showed what ZnO NW growth was determined by migration of zinc interstitials and vacancies in a ZnO layer, which should be also considered in other synthesis techniques and mechanisms. The mechanism of the ZnO NW growth was explained as due to the advantageous diffusion through grain boundaries in ZnO layer and crystal defects in NWs. Additionally, on the basis of photoluminescence measurements, a feasible application of as-produced wires for optoelectronic devices was demonstrated.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli183114
Sivut1-3
Sivumäärä3
JulkaisuApplied Physics Letters
Vuosikerta95
Numero18
TilaJulkaistu - 2009
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • diffusion, grain boundaries, II-VI semiconductors, interstitials, nanotechnology, nanowires, photoluminescence, vacancies (crystal), wide band gap semiconductors, zinc compounds,

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