Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • T. A. Bryantseva
  • D. V. Lybchenko
  • V. E. Lybchenko
  • I.A. Markov
  • Roman I. Markov

Organisaatiot

  • Russian Academy of Sciences
  • Aalto University

Kuvaus

Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut184-190
Sivumäärä7
JulkaisuSemiconductors
Vuosikerta48
Numero2
TilaJulkaistu - helmikuuta 2014
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 12977900