Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves

T. A. Bryantseva*, D. V. Lybchenko, V. E. Lybchenko, I.A. Markov, Roman I. Markov

*Tämän työn vastaava kirjoittaja

    Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

    3 Sitaatiot (Scopus)

    Abstrakti

    Mass-transfer processes are investigated by the chemical analysis of gallium-arsenide surface layers after irradiation of the GaAs surface with low-intensity (13-25 mW) electromagnetic waves at a frequency of 75 GHz. The electromechanical stresses on the GaAs surface are shown to change under the action of radiation, and relaxation processes with the involvement of the mass transfer of charged particles arise. As a result of irradiation, islands based on the solution (Ga + As) or GaAs compounds are precipitated, and the surface bend of the basic GaAs compound changes. In this case, the mass transfer depends on the charged-particle drift under the action of voltage and on the surface self-diffusion rate under the action of mechanical stresses.

    AlkuperäiskieliEnglanti
    Sivut184-190
    Sivumäärä7
    JulkaisuSemiconductors
    Vuosikerta48
    Numero2
    DOI - pysyväislinkit
    TilaJulkaistu - helmikuuta 2014
    OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Siteeraa tätä

    Bryantseva, T. A., Lybchenko, D. V., Lybchenko, V. E., Markov, I. A., & Markov, R. I. (2014). Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves. Semiconductors, 48(2), 184-190. https://doi.org/10.1134/S1063782614020067