Majority Carrier Mobility of Compensated Silicon: Comparison of Room Temperature Measurements and Models

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussavertaisarvioitu

Tutkijat

  • Song Zhang
  • Chiara Modanese

  • Guilherme Gaspar
  • Rune Søndenå
  • Gabriella Tranell
  • Marisa Di Sabatino

Organisaatiot

  • Norwegian University of Science and Technology
  • Institute for Energy Technology

Kuvaus

In this work the measured majority carrier mobility in compensated silicon is compared to values predicted by two different models: Klaassen's model for conventional silicon and the more recent unified model for compensated silicon by Schindler et al (Schindler's model). The purpose of the comparison is to broaden the range of materials included in the newly developed model for compensated materials. As observed previously, the deviation of the prediction by Klaassen's model from the experimental data increases with increasing compensation ratio, RC. It is observed that above a critical RC value (RC > 5.5) the deviation from the measured values is lower for Schindler's model. Occasionally high deviations are observed, which are believed to be related to unusually high defect density of the samples, e.g. defects related to light elements (oxygen and carbon) or metal impurities. Such impurities may contribute considerably to the ionized impurity concentration. Therefore, it is suggested that knowledge of additional parameters to the doping concentration is needed in order to increase the accuracy of Schindler's model.

Yksityiskohdat

AlkuperäiskieliEnglanti
OtsikkoProceedings of the 6th International Conference on Crystalline Silicon Photovoltaics
AlaotsikkoSiliconPV 2016
TilaJulkaistu - 1 elokuuta 2016
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Crystalline Silicon Photovoltaics - Chambéry, Ranska
Kesto: 7 maaliskuuta 20169 maaliskuuta 2016
Konferenssinumero: 6

Julkaisusarja

NimiENERGY PROCEDIA
KustantajaElsevier
Vuosikerta92
ISSN (elektroninen)1876-6102

Conference

ConferenceInternational Conference on Crystalline Silicon Photovoltaics
LyhennettäSiliconPV
MaaRanska
KaupunkiChambéry
Ajanjakso07/03/201609/03/2016

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