We have performed magnetotransport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on topological insulator PdxBi2Te3(0=x=0.20) single crystals. We have observed unusually high values of magnetoresistance (~1500%) and mobility (~93000cm2V-1s-1) at low temperatures for pristine Bi2Te3 that decrease upon Pd doping. Shubnikov-de Haas (SdH) oscillations were detected for x=0.05, 0.10, confirming the presence of two-dimensional topological surface states (TSSs) for these samples. Hall measurement shows the crossover from n-type charge carriers in pristine Bi2Te3 to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi2Te3, and the Dirac point of the TSSs and bulk-derived valence bands indicated a shift to lower binding energy upon Pd doping in a rigid-band-like way up to x~0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magnetotransport measurements is likely due to the band bending induced by the Schottky barrier.