Magnetometry with Low-Resistance Proximity Josephson Junction

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Magnetometry with Low-Resistance Proximity Josephson Junction. / Najafi Jabdaraghi, Robab; Peltonen, Joonas; Golubev, Dmitry; Pekola, J.P.

julkaisussa: Journal of Low Temperature Physics, Vuosikerta 191, Nro 5-6, 01.06.2018, s. 344-353.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{09006059003b408596d3d601fa2d9a66,
title = "Magnetometry with Low-Resistance Proximity Josephson Junction",
abstract = "We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).",
keywords = "Proximity effect, SQUIPT, SNS junction, Nb-SQUIPT",
author = "{Najafi Jabdaraghi}, Robab and Joonas Peltonen and Dmitry Golubev and J.P. Pekola",
year = "2018",
month = "6",
day = "1",
doi = "10.1007/s10909-018-1863-x",
language = "English",
volume = "191",
pages = "344--353",
journal = "Journal of Low Temperature Physics",
issn = "0022-2291",
number = "5-6",

}

RIS - Lataa

TY - JOUR

T1 - Magnetometry with Low-Resistance Proximity Josephson Junction

AU - Najafi Jabdaraghi, Robab

AU - Peltonen, Joonas

AU - Golubev, Dmitry

AU - Pekola, J.P.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

AB - We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb–Cu–Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb–Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55nA/Φ0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al–Cu–Al SNS junction and an Al tunnel probe (Al-SQUIPT).

KW - Proximity effect

KW - SQUIPT

KW - SNS junction

KW - Nb-SQUIPT

UR - https://link.springer.com/article/10.1007/s10909-018-1863-x

U2 - 10.1007/s10909-018-1863-x

DO - 10.1007/s10909-018-1863-x

M3 - Article

VL - 191

SP - 344

EP - 353

JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

SN - 0022-2291

IS - 5-6

ER -

ID: 15678518