Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski; Toni P. Pasanen; Ismo Heikkinen; Michael Serué; Hele Savin

doi:10.1063/1.5123900

Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski, Toni P. Pasanen, Ismo Heikkinen, Michael Serué, Hele Savin

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

6 Sitaatiot (Scopus)

107 Lataukset (Pure)

Abstrakti

Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.

Alkuperäiskieli	Englanti
Otsikko	SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics
Kustantaja	AIP Publishing
Vuosikerta	2147
Painos	1
ISBN (elektroninen)	978-0-7354-1892-9
DOI - pysyväislinkit	https://doi.org/10.1063/1.5123900
Tila	Julkaistu - 27 elok. 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Crystalline Silicon Photovoltaics - Leuven, Belgia Kesto: 8 huhtik. 2019 → 10 huhtik. 2019 Konferenssinumero: 9 https://www.siliconpv.com/home/

Julkaisusarja

Nimi	AIP Conference Proceedings
Kustantaja	American Institute of Physics
ISSN (painettu)	0094-243X

Conference

Conference	International Conference on Crystalline Silicon Photovoltaics
Lyhennettä	SiliconPV
Maa/Alue	Belgia
Kaupunki	Leuven
Ajanjakso	08/04/2019 → 10/04/2019
www-osoite	https://www.siliconpv.com/home/

Pääsy asiakirjaan

10.1063/1.5123900

SiPV2019_proceedings_Low_T_anneal_as_cure_for_LeTID_in_mc_Si_PERC_cellsAccepted author manuscript, 530 KB

Riddle of light induced degradation in silicon photovoltaics
Savin, H. (Vastuullinen tutkija)
01/12/2012 → 31/12/2017
Projekti: EU: ERC grants

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

@inproceedings{87ae6cf46bc3497181b991c0615d5d08,

title = "Low-T anneal as cure for LeTID in Mc-Si PERC cells",

abstract = "Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism. ",

author = "Marko Yli-Koski and Pasanen, {Toni P.} and Ismo Heikkinen and Michael Seru{\'e} and Hele Savin",

note = "| openaire: EC/FP7/307315/EU//SOLARX; International Conference on Crystalline Silicon Photovoltaics, SiliconPV ; Conference date: 08-04-2019 Through 10-04-2019",

year = "2019",

month = aug,

day = "27",

doi = "10.1063/1.5123900",

language = "English",

volume = "2147",

series = "AIP Conference Proceedings",

publisher = "AIP Publishing",

booktitle = "SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics",

address = "United States",

edition = "1",

url = "https://www.siliconpv.com/home/",

}

Yli-Koski, M, Pasanen, TP, Heikkinen, I, Serué, M & Savin, H 2019, Low-T anneal as cure for LeTID in Mc-Si PERC cells. julkaisussa SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. 1 toim, Vuosikerta 2147, AIP Conference Proceedings, AIP Publishing, International Conference on Crystalline Silicon Photovoltaics, Leuven, Belgia, 08/04/2019. https://doi.org/10.1063/1.5123900

Low-T anneal as cure for LeTID in Mc-Si PERC cells. / Yli-Koski, Marko; Pasanen, Toni P.; Heikkinen, Ismo et al.
SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics. Vuosikerta 2147 1. toim. AIP Publishing, 2019. (AIP Conference Proceedings).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Low-T anneal as cure for LeTID in Mc-Si PERC cells

AU - Yli-Koski, Marko

AU - Pasanen, Toni P.

AU - Heikkinen, Ismo

AU - Serué, Michael

AU - Savin, Hele

N1 - Conference code: 9

PY - 2019/8/27

Y1 - 2019/8/27

N2 - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

AB - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

U2 - 10.1063/1.5123900

DO - 10.1063/1.5123900

M3 - Conference article in proceedings

VL - 2147

T3 - AIP Conference Proceedings

BT - SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics

PB - AIP Publishing

T2 - International Conference on Crystalline Silicon Photovoltaics

Y2 - 8 April 2019 through 10 April 2019

ER -

Low-T anneal as cure for LeTID in Mc-Si PERC cells

Abstrakti

Julkaisusarja

Conference

Pääsy asiakirjaan

Sormenjälki

Projektit

Riddle of light induced degradation in silicon photovoltaics

Laitteet

OtaNano

OtaNano Nanofab

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