Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski; Toni P. Pasanen; Ismo Heikkinen; Michael Serué; Hele Savin

doi:10.1063/1.5123900

Low-T anneal as cure for LeTID in Mc-Si PERC cells

Marko Yli-Koski, Toni P. Pasanen, Ismo Heikkinen, Michael Serué, Hele Savin

Tutkimustuotos: Lehtiartikkeli › Conference article › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

65 Lataukset (Pure)

Abstrakti

Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on
fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long
anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation
and discuss the possibility of metals being involved in LeTID mechanism.

Alkuperäiskieli	Englanti
Artikkeli	140013
Julkaisu	AIP CONFERENCE PROCEEDINGS
Vuosikerta	2147
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1063/1.5123900
Tila	Julkaistu - 27 elokuuta 2019
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	International Conference on Crystalline Silicon Photovoltaics - Leuven, Belgia Kesto: 8 huhtikuuta 2019 → 10 huhtikuuta 2019 Konferenssinumero: 9 https://www.siliconpv.com/home/

Pääsy asiakirjaan

10.1063/1.5123900

SiPV2019_proceedings_Low_T_anneal_as_cure_for_LeTID_in_mc_Si_PERC_cellsAccepted author manuscript, 530 KB

Sormenjälki Sukella tutkimusaiheisiin 'Low-T anneal as cure for LeTID in Mc-Si PERC cells'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.

Projektit

1 Päättynyt

Riddle of light induced degradation in silicon photovoltaics

Savin, H., Yli-Koski, M., Vähänissi, V., Laine, H., Huang, H., Inglese, A., Modanese, C., Heikkinen, I., Vahlman, H., Nampalli, N. & von Gastrow, G.

01/12/2012 → 31/05/2018

Projekti: EU: ERC grants

Laitteet

OtaNano

Anna Rissanen (Manager)

Aalto-yliopisto

Laitteistot/tilat: Facility

OtaNano Nanofab

Päivikki Repo (Manager)

Sähkötekniikan korkeakoulu

Laitteistot/tilat: Facility

Siteeraa tätä

Yli-Koski, M., Pasanen, T. P., Heikkinen, I., Serué, M., & Savin, H. (2019). Low-T anneal as cure for LeTID in Mc-Si PERC cells. AIP CONFERENCE PROCEEDINGS, 2147(1), [140013]. https://doi.org/10.1063/1.5123900

@article{87ae6cf46bc3497181b991c0615d5d08,

title = "Low-T anneal as cure for LeTID in Mc-Si PERC cells",

abstract = "Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.",

author = "Marko Yli-Koski and Pasanen, {Toni P.} and Ismo Heikkinen and Michael Seru{\'e} and Hele Savin",

note = "| openaire: EC/FP7/307315/EU//SOLARX",

year = "2019",

month = "8",

day = "27",

doi = "10.1063/1.5123900",

language = "English",

volume = "2147",

journal = "AIP CONFERENCE PROCEEDINGS",

issn = "0094-243X",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Low-T anneal as cure for LeTID in Mc-Si PERC cells

AU - Yli-Koski, Marko

AU - Pasanen, Toni P.

AU - Heikkinen, Ismo

AU - Serué, Michael

AU - Savin, Hele

N1 - | openaire: EC/FP7/307315/EU//SOLARX

PY - 2019/8/27

Y1 - 2019/8/27

N2 - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

AB - Light and elevated temperature induced degradation (LeTID) is known to be affected by the last dark anneal that the silicon wafers or cells experience prior to illumination. Here we study how low-temperature dark anneal performed on fully processed multicrystalline silicon (mc-Si) passivated emitter and rear solar cells (PERC) influences LeTID characteristics, both the intensity of the degradation and the degradation kinetics. Our results show that a relatively long anneal at 300 °C provides an efficient means to minimize LeTI D while too short dark anneal at the same temperature seems to have a negative impact on the subsequent degradation under light soaking. Finally, we compare the experimental results with the model originally developed for metal precipitation and discuss the possibility of metals being involved in LeTID mechanism.

U2 - 10.1063/1.5123900

DO - 10.1063/1.5123900

M3 - Conference article

VL - 2147

JO - AIP CONFERENCE PROCEEDINGS

JF - AIP CONFERENCE PROCEEDINGS

SN - 0094-243X

IS - 1

M1 - 140013

ER -