Low-load indentation behavior of HfN thin films deposited by reactive rf sputtering

R. Nowak, C. L. Li, S. Maruno

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

Abstrakti

Deformation of HfN thin films deposited by the reactive sputtering method on silicon and alumina substrates has been investigated using depth-sensing indentation. The experiments performed in a low load range (2-50 mN) revealed that even extremely shallow indentations were affected by the elastic/plastic response of the substrate. The analysis of the shape of the indentation load-depth hysteresis loops and of conventional hardness data was supplemented by considerations based on the recently proposed energy principle of indentation.

AlkuperäiskieliEnglanti
Sivut64-69
Sivumäärä6
JulkaisuJournal of Materials Research
Vuosikerta12
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 1997
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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