TY - JOUR
T1 - Low-energy Se ion implantation in MoS2 monolayers
AU - Bui, Minh N.
AU - Rost, Stefan
AU - Auge, Manuel
AU - Tu, Jhih Sian
AU - Zhou, Lanqing
AU - Aguilera, Irene
AU - Blügel, Stefan
AU - Ghorbani-Asl, Mahdi
AU - Krasheninnikov, Arkady V.
AU - Hashemi, Arsalan
AU - Komsa, Hannu Pekka
AU - Jin, Lei
AU - Kibkalo, Lidia
AU - O’Connell, Eoghan N.
AU - Ramasse, Quentin M.
AU - Bangert, Ursel
AU - Hofsäss, Hans C.
AU - Grützmacher, Detlev
AU - Kardynal, Beata E.
N1 - Funding Information:
This project is supported by the “Integration of Molecular Components in Functional Macroscopic Systems” initiative of Volkswagen Foundation. We would like to thank the staff at the Helmholtz Nano Facility 63 of Forschungszentrum Jülich for helping with substrate fabrication; Dr. Sven Borghardt for setting up equipment and advices on sample preparation; Dr. Christoph Friedrich for fruitful exchanges. We acknowledge the computing time granted through JARA-HPC on the supercomputer JURECA at Forschungszentrum Jülich and also CSC–IT Center for Science Ltd. (Finland). A.V.K. acknowledges funding from the German Research Foundation (DFG), Project KR 4866/2-1 (406129719) and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. Generous grants of computer time from the Technical University of Dresden computing cluster (TAURUS) and the High Performance Computing Center (HLRS) in Stuttgart, Germany, are gratefully appreciated. E.O.C. acknowledges the support by the Irish Research Council under the Postgraduate Government of Ireland grant GOIPG/2015/2410.
Funding Information:
This project is supported by the “Integration of Molecular Components in Functional Macroscopic Systems” initiative of Volkswagen Foundation. We would like to thank the staff at the Helmholtz Nano Facility of Forschungszentrum Jülich for helping with substrate fabrication; Dr. Sven Borghardt for setting up equipment and advices on sample preparation; Dr. Christoph Friedrich for fruitful exchanges. We acknowledge the computing time granted through JARA-HPC on the supercomputer JURECA at Forschungszentrum Jülich and also CSC–IT Center for Science Ltd. (Finland). A.V.K. acknowledges funding from the German Research Foundation (DFG), Project KR 4866/2-1 (406129719) and the collaborative research center “Chemistry of Synthetic 2D Materials” SFB-1415-417590517. Generous grants of computer time from the Technical University of Dresden computing cluster (TAURUS) and the High Performance Computing Center (HLRS) in Stuttgart, Germany, are gratefully appreciated. E.O.C. acknowledges the support by the Irish Research Council under the Postgraduate Government of Ireland grant GOIPG/2015/2410.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/6/21
Y1 - 2022/6/21
N2 - In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.
AB - In this work, we study ultra-low energy implantation into MoS2 monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use 80Se+ ions at the energy of 20 eV and with fluences up to 5.0·1014 cm−2. Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS2−2xSe2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS2 monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.
UR - http://www.scopus.com/inward/record.url?scp=85132832795&partnerID=8YFLogxK
U2 - 10.1038/s41699-022-00318-4
DO - 10.1038/s41699-022-00318-4
M3 - Article
AN - SCOPUS:85132832795
VL - 6
SP - 1
EP - 8
JO - npj 2D Materials and Applications
JF - npj 2D Materials and Applications
SN - 2397-7132
IS - 1
M1 - 42
ER -