Key parameters influencing Cu-Sn interfacial void formation

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientific

Abstrakti

Recent trends in 3D integration and dimensional scaling technologies have attracted interest in micro-connects as a novel method for interconnection. Micro-connects, including small volume interconnects (or microbumps) and Solid Liquid Interdiffusion (SLID) bonds for Micro- or Nanoelectromechanical Systems (MEMS and NEMS) are functionally far superior compared with traditional large volume interconnects and enable novel integration techniques
for the miniaturisation and diversification of complex integrated systems. As micro-connects have smaller volumes than traditional forms of interconnects, they become more susceptible to microstructural defects. Such defects can lead to the catastrophic and costly failures within complex integrated systems. This study of Cu-Sn micro-connects has resulted from the publishing of several papers on the reliability reduction with interfacial voiding cited as the root cause. Interfacial voids (often referred to as Kirkendall voids) form in micro-connects fabricated using electroplated Cu in contact with the low melting point metal Sn. A variety of Cu electroplating chemistries and current densities were used to assess the void formation characteristics and the resulting IMC growth rates. The variety of parameters is designed to assess the impacts on void formation. This data will enable electronic integration developers to better understand the reliability impacts and for manufactures to understand key parameters associated with void formation.
AlkuperäiskieliEnglanti
OtsikkoProceedings of the 18th IEEE Electronics Packaging Technology Conference, EPTC 2016
KustantajaIEEE
Sivut459-467
Sivumäärä9
ISBN (elektroninen)978-1-5090-4368-2
DOI - pysyväislinkit
TilaJulkaistu - 23 helmikuuta 2017
OKM-julkaisutyyppiB3 Ei-soviteltu artikkeli konferenssin julkaisusarjassa
TapahtumaIEEE Electronics Packaging Technology Conference - Singapore, Singapore
Kesto: 30 marraskuuta 20163 joulukuuta 2016
Konferenssinumero: 18

Julkaisusarja

NimiElectronics Packaging Technology Conference Proceedings

Conference

ConferenceIEEE Electronics Packaging Technology Conference
LyhennettäEPTC
MaaSingapore
KaupunkiSingapore
Ajanjakso30/11/201603/12/2016

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    Ross, G., Vuorinen, V., & Paulasto-Kröckel, M. (2017). Key parameters influencing Cu-Sn interfacial void formation. teoksessa Proceedings of the 18th IEEE Electronics Packaging Technology Conference, EPTC 2016 (Sivut 459-467). (Electronics Packaging Technology Conference Proceedings). IEEE. https://doi.org/10.1109/EPTC.2016.7861521