Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications. / Liang, Jie; Chen, Rongmei; Ramos, Raphael; Lee, Jaehyun; Okuno, Hanako; Kalita, Dipankar; Georgiev, Vihar; Berrada, Salim; Sadi, Toufik; Uhlig, Benjamin; Lilienthal, Katherina; Dhavamani, Abitha; Konemann, Fabian; Gotsmann, Bernd; Goncalves, Goncalves; Chen, Bingan; Asenov, Asen; Dijon, Jean; Todri-Sanial, Aida.

julkaisussa: IEEE Transactions on Electron Devices, Vuosikerta 66, Nro 5, 8664183, 01.05.2019, s. 2346-2352.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Liang, J, Chen, R, Ramos, R, Lee, J, Okuno, H, Kalita, D, Georgiev, V, Berrada, S, Sadi, T, Uhlig, B, Lilienthal, K, Dhavamani, A, Konemann, F, Gotsmann, B, Goncalves, G, Chen, B, Asenov, A, Dijon, J & Todri-Sanial, A 2019, 'Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications', IEEE Transactions on Electron Devices, Vuosikerta. 66, Nro 5, 8664183, Sivut 2346-2352. https://doi.org/10.1109/TED.2019.2901658

APA

Liang, J., Chen, R., Ramos, R., Lee, J., Okuno, H., Kalita, D., ... Todri-Sanial, A. (2019). Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications. IEEE Transactions on Electron Devices, 66(5), 2346-2352. [8664183]. https://doi.org/10.1109/TED.2019.2901658

Vancouver

Author

Liang, Jie ; Chen, Rongmei ; Ramos, Raphael ; Lee, Jaehyun ; Okuno, Hanako ; Kalita, Dipankar ; Georgiev, Vihar ; Berrada, Salim ; Sadi, Toufik ; Uhlig, Benjamin ; Lilienthal, Katherina ; Dhavamani, Abitha ; Konemann, Fabian ; Gotsmann, Bernd ; Goncalves, Goncalves ; Chen, Bingan ; Asenov, Asen ; Dijon, Jean ; Todri-Sanial, Aida. / Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications. Julkaisussa: IEEE Transactions on Electron Devices. 2019 ; Vuosikerta 66, Nro 5. Sivut 2346-2352.

Bibtex - Lataa

@article{5f734f81e6ce489abf3923a6b9bb5f0a,
title = "Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications",
abstract = "In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90{\%} by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50{\%} of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.",
keywords = "Carbon nanotube (cnt), cnt contact resistance, defective cnts, doped cnts, doping process of cnt, individual cnt growth, local on-chip interconnects",
author = "Jie Liang and Rongmei Chen and Raphael Ramos and Jaehyun Lee and Hanako Okuno and Dipankar Kalita and Vihar Georgiev and Salim Berrada and Toufik Sadi and Benjamin Uhlig and Katherina Lilienthal and Abitha Dhavamani and Fabian Konemann and Bernd Gotsmann and Goncalves Goncalves and Bingan Chen and Asen Asenov and Jean Dijon and Aida Todri-Sanial",
year = "2019",
month = "5",
day = "1",
doi = "10.1109/TED.2019.2901658",
language = "English",
volume = "66",
pages = "2346--2352",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "5",

}

RIS - Lataa

TY - JOUR

T1 - Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

AU - Liang, Jie

AU - Chen, Rongmei

AU - Ramos, Raphael

AU - Lee, Jaehyun

AU - Okuno, Hanako

AU - Kalita, Dipankar

AU - Georgiev, Vihar

AU - Berrada, Salim

AU - Sadi, Toufik

AU - Uhlig, Benjamin

AU - Lilienthal, Katherina

AU - Dhavamani, Abitha

AU - Konemann, Fabian

AU - Gotsmann, Bernd

AU - Goncalves, Goncalves

AU - Chen, Bingan

AU - Asenov, Asen

AU - Dijon, Jean

AU - Todri-Sanial, Aida

PY - 2019/5/1

Y1 - 2019/5/1

N2 - In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.

AB - In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.

KW - Carbon nanotube (cnt)

KW - cnt contact resistance

KW - defective cnts

KW - doped cnts

KW - doping process of cnt

KW - individual cnt growth

KW - local on-chip interconnects

UR - http://www.scopus.com/inward/record.url?scp=85064984855&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2901658

DO - 10.1109/TED.2019.2901658

M3 - Article

VL - 66

SP - 2346

EP - 2352

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

M1 - 8664183

ER -

ID: 33936879