Investigation of Pt-Salt-Doped-Standalone-Multiwall Carbon Nanotubes for On-Chip Interconnect Applications

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Jie Liang
  • Rongmei Chen
  • Raphael Ramos
  • Jaehyun Lee
  • Hanako Okuno
  • Dipankar Kalita
  • Vihar Georgiev
  • Salim Berrada
  • Dr Toufik Sadi

  • Benjamin Uhlig
  • Katherina Lilienthal
  • Abitha Dhavamani
  • Fabian Konemann
  • Bernd Gotsmann
  • Goncalves Goncalves
  • Bingan Chen
  • Asen Asenov
  • Jean Dijon
  • Aida Todri-Sanial

Organisaatiot

  • Universite de Montpellier
  • CNRS/IN2P3
  • University of Glasgow
  • Fraunhofer Institute for Photonic Microsystems
  • IBM Zurich Research Laboratory
  • Aixtron Ltd

Kuvaus

In this paper, we investigate, by combining electrical measurements with an atomistic-To-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli8664183
Sivut2346-2352
Sivumäärä7
JulkaisuIEEE Transactions on Electron Devices
Vuosikerta66
Numero5
TilaJulkaistu - 1 toukokuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 33936879