Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy

K. Saarinen, A.P. Seitsonen, P. Hautojärvi, C. Corbel

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

33 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Julkaisu	Physical Review B
Vuosikerta	52
Tila	Julkaistu - 1995
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Tutkimusalat

@article{eaa433a7f6e245d882222befe8530dc1,

title = "Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy",

keywords = "GaAs, positron, GaAs, positron, GaAs, positron",

author = "K. Saarinen and A.P. Seitsonen and P. Hautoj{\"a}rvi and C. Corbel",

year = "1995",

language = "English",

volume = "52",

journal = "Physical Review B",

issn = "2469-9969",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy

AU - Saarinen, K.

AU - Seitsonen, A.P.

AU - Hautojärvi, P.

AU - Corbel, C.

PY - 1995

Y1 - 1995

KW - GaAs

KW - positron

KW - GaAs

KW - positron

KW - GaAs

KW - positron

M3 - Article

SN - 2469-9969

SN - 1550-235X

SN - 1095-3795

VL - 52

JO - Physical Review B

JF - Physical Review B

ER -