Interfacial Reactions Between ZnAl(Ge) Solders on Cu and Ni Substrates

Tutkimustuotos: Lehtiartikkeli

Tutkijat

Organisaatiot

Kuvaus

Reactions between zinc-aluminum-germanium solder and copper/nickel substrates were investigated after 30 min of soldering at 420textdegreeC that simulates a wafer-level bonding process, and the results were compared to a eutectic zinc-aluminum solder. The ZnAlGe system (81.4 at.% Zn, 13.1 at.% Al, 5.5 at.% Ge) was selected in order to decrease the eutectic temperature of the ZnAleut (88.7 at.% Zn, 11.3 at.% Al) for high-temperature lead-free solder applications. In addition, a standard high temperature storage test at 150textdegreeC was performed up to 3000 h in order to investigate the evolution of the interconnection microstructures. Extensive copper dissolution was discovered during the soldering process. Germanium did not participate in any of the interfacial reactions on a copper substrate. On a nickel substrate, rapid formation of intermetallic compounds was discovered with both solders, and all the aluminum from the 500 $m thick solder was consumed by the formation of the Al3Ni2 phase during bonding. Germanium was observed to dissolve in the Al3Ni2 phase, but the addition of germanium to the solder was not found to affect markedly the interfacial microstructure. Based on the results, isothermal sections at 150textdegreeC of Al-Cu-Zn and Al-Ni-Zn systems are presented with superimposed diffusion paths.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut2323-2333
Sivumäärä11
JulkaisuJournal of Electronic Materials
Vuosikerta46
Numero4
Varhainen verkossa julkaisun päivämäärä19 tammikuuta 2017
TilaJulkaistu - 1 huhtikuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 11073610