Instability of the Sb vacancy in GaSb

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • University of Helsinki

Kuvaus

We demonstrate that the instability of the Sb vacancy in GaSb leads to a further increase in the acceptor-type defect concentration in proton irradiated undoped, p-type GaSb. Using positron annihilation spectroscopy in situ with 10 MeV proton irradiation at 35 K, we find that the irradiation produces both native vacancy defects in GaSb. However, the Sb vacancy is unstable above temperatures of 150 K and undergoes a transition resulting in a Ga vacancy and a Ga antisite. The activation energy of this transition is determined to be 0.6 eV +/- 0.1 eV. Our results are in line with the established amphoteric defect model and prove that the instability of the Sb vacancy in GaSb has a profound role on the native defect concentration in GaSb.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli184103
Sivut1-5
Sivumäärä5
JulkaisuPhysical Review B
Vuosikerta95
Numero18
TilaJulkaistu - 3 toukokuuta 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Lataa tilasto

Ei tietoja saatavilla

ID: 13681673