InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Vladislav Khayrudinov; Tomi Koskinen; Kacper Grodecki; Krzysztof Murawski; Małgorzata Kopytko; Lide Yao; Hua Jiang; Ilkka Juhani Tittonen; Harri Lipsanen; Tuomas Haggren

doi:10.1021/acsaelm.1c01175

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Vladislav Khayrudinov^*
, Tomi Koskinen
, Kacper Grodecki
, Krzysztof Murawski
, Małgorzata Kopytko
, Lide Yao
, Hua Jiang
, Ilkka Juhani Tittonen
, Harri Lipsanen
, Tuomas Haggren

^*Tämän työn vastaava kirjoittaja

Military University of Technology Warsaw

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

9 Sitaatiot (Scopus)

109 Lataukset (Pure)

Abstrakti

We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

Alkuperäiskieli	Englanti
Sivut	539-545
Sivumäärä	7
Julkaisu	ACS Applied Electronic Materials
Vuosikerta	4
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1021/acsaelm.1c01175
Tila	Julkaistu - 25 tammik. 2022
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlström Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlström Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Hällström for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center.

Pääsy asiakirjaan

10.1021/acsaelm.1c01175Lisenssi: CC BY

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device FabricationFinal published version, 6,43 MBLisenssi: CC BY

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01/01/2019 → 31/12/2022
Projekti: Academy of Finland: Other research funding

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@article{f12483570eff425ebdd44a6f98e6b49d,

title = "InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication",

abstract = "We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.",

keywords = "bendable, flexible, InSb nanowires, MOVPE/MOCVD, photoluminescence, photoresistor",

author = "Vladislav Khayrudinov and Tomi Koskinen and Kacper Grodecki and Krzysztof Murawski and Ma{\l}gorzata Kopytko and Lide Yao and Hua Jiang and Tittonen, \{Ilkka Juhani\} and Harri Lipsanen and Tuomas Haggren",

note = "Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstr{\"o}m Foundation, Elektroniikkainsin{\"o}{\"o}rien S{\"a}{\"a}ti{\"o}, S{\"a}hk{\"o}insin{\"o}{\"o}riliiton S{\"a}{\"a}ti{\"o}, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edist{\"a}miss{\"a}{\"a}ti{\"o}), Waldemar von Frenckell{\textquoteright}s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstr{\"o}m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstr{\"o}m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi H{\"a}llstr{\"o}m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: {\textcopyright} 2022 The Authors. Published by American Chemical Society",

year = "2022",

month = jan,

day = "25",

doi = "10.1021/acsaelm.1c01175",

language = "English",

volume = "4",

pages = "539--545",

journal = "ACS Applied Electronic Materials",

issn = "2637-6113",

publisher = "American Chemical Society",

number = "1",

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TY - JOUR

T1 - InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

AU - Khayrudinov, Vladislav

AU - Koskinen, Tomi

AU - Grodecki, Kacper

AU - Murawski, Krzysztof

AU - Kopytko, Małgorzata

AU - Yao, Lide

AU - Jiang, Hua

AU - Tittonen, Ilkka Juhani

AU - Lipsanen, Harri

AU - Haggren, Tuomas

N1 - Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell’s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlström Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlström Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Hällström for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: © 2022 The Authors. Published by American Chemical Society

PY - 2022/1/25

Y1 - 2022/1/25

N2 - We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

AB - We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.

KW - bendable

KW - flexible

KW - InSb nanowires

KW - MOVPE/MOCVD

KW - photoluminescence

KW - photoresistor

UR - https://www.scopus.com/pages/publications/85123925250

U2 - 10.1021/acsaelm.1c01175

DO - 10.1021/acsaelm.1c01175

M3 - Article

AN - SCOPUS:85123925250

SN - 2637-6113

VL - 4

SP - 539

EP - 545

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 1

ER -

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

Abstrakti

Rahoitus

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Projektit

PREIN: Fotoniikan Tutkimus ja Innovaatio

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OtaNano Nanomikroskopiakeskus

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