@article{f12483570eff425ebdd44a6f98e6b49d,
title = "InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication",
abstract = "We report direct growth of InSb nanowires (NWs) and monolithic device fabrication on flexible plastic substrates. The nanowires were grown using metal–organic vapor-phase epitaxy (MOVPE) in self-catalyzed mode. The InSb NWs are shown to form in the zinc-blende crystal structure and to exhibit strong photoluminescence at room temperature. The NW array light-trapping properties are evidenced by reflectance that is significantly reduced compared to bulk material. Finally, the InSb NWs are used to demonstrate a metal–semiconductor–metal photoresistor directly on the flexible plastic substrate. The results are believed to advance the integration of III–V nanowires to flexible devices, and infrared photodetectors in particular.",
keywords = "bendable, flexible, InSb nanowires, MOVPE/MOCVD, photoluminescence, photoresistor",
author = "Vladislav Khayrudinov and Tomi Koskinen and Kacper Grodecki and Krzysztof Murawski and Ma{\l}gorzata Kopytko and Lide Yao and Hua Jiang and Tittonen, {Ilkka Juhani} and Harri Lipsanen and Tuomas Haggren",
note = "Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstro?m Foundation, Elektroniikkainsino?o?rien Sa?a?tio?, Sa?hko?insino?o?riliiton Sa?a?tio?, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edista?missa?a?tio?), Waldemar von Frenckell?s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstro?m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstro?m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi Ha?llstro?m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Funding Information: V.K. acknowledges the support of Aalto University Doctoral School, Walter Ahlstr{\"o}m Foundation, Elektroniikkainsin{\"o}{\"o}rien S{\"a}{\"a}ti{\"o}, S{\"a}hk{\"o}insin{\"o}{\"o}riliiton S{\"a}{\"a}ti{\"o}, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edist{\"a}miss{\"a}{\"a}ti{\"o}), Waldemar von Frenckell{\textquoteright}s Foundation, and Kansallis-Osake-Pankki fund. T.K. acknowledges the support of Aalto University Doctoral School and Walter Ahlstr{\"o}m Foundation. T.H. acknowledges the support of the Finnish Cultural Foundation and Walter Ahlstr{\"o}m Foundation. The Academy of Finland Photonics Flagship PREIN is acknowledged. The authors thank Lassi H{\"a}llstr{\"o}m for the help with the solar simulator measurements. The authors acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre and Nanomicroscopy Center. Publisher Copyright: {\textcopyright} 2022 The Authors. Published by American Chemical Society",
year = "2022",
month = jan,
day = "25",
doi = "10.1021/acsaelm.1c01175",
language = "English",
volume = "4",
pages = "539--545",
journal = "ACS Applied Electronic Materials",
issn = "2637-6113",
publisher = "American Chemical Society",
number = "1",
}