InP nanowire p-type doping via Zinc indiffusion

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

InP nanowire p-type doping via Zinc indiffusion. / Haggren, Tuomas; Otnes, Gaute; Mourão, Renato; Dagyte, Vilgaile; Hultin, Olof; Lindelöw, Fredrik; Borgström, Magnus; Samuelson, Lars.

julkaisussa: Journal of Crystal Growth, Vuosikerta 451, 01.10.2016, s. 18-26.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Haggren, T, Otnes, G, Mourão, R, Dagyte, V, Hultin, O, Lindelöw, F, Borgström, M & Samuelson, L 2016, 'InP nanowire p-type doping via Zinc indiffusion', Journal of Crystal Growth, Vuosikerta. 451, Sivut 18-26. https://doi.org/10.1016/j.jcrysgro.2016.06.020

APA

Haggren, T., Otnes, G., Mourão, R., Dagyte, V., Hultin, O., Lindelöw, F., ... Samuelson, L. (2016). InP nanowire p-type doping via Zinc indiffusion. Journal of Crystal Growth, 451, 18-26. https://doi.org/10.1016/j.jcrysgro.2016.06.020

Vancouver

Haggren T, Otnes G, Mourão R, Dagyte V, Hultin O, Lindelöw F et al. InP nanowire p-type doping via Zinc indiffusion. Journal of Crystal Growth. 2016 loka 1;451:18-26. https://doi.org/10.1016/j.jcrysgro.2016.06.020

Author

Haggren, Tuomas ; Otnes, Gaute ; Mourão, Renato ; Dagyte, Vilgaile ; Hultin, Olof ; Lindelöw, Fredrik ; Borgström, Magnus ; Samuelson, Lars. / InP nanowire p-type doping via Zinc indiffusion. Julkaisussa: Journal of Crystal Growth. 2016 ; Vuosikerta 451. Sivut 18-26.

Bibtex - Lataa

@article{ef4242bfa09e44e2a49e55f1b1fb6757,
title = "InP nanowire p-type doping via Zinc indiffusion",
abstract = "We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up to 1018 cm−3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.",
keywords = "A1. Annealing, A1. Diffusion, A1. Doping, A3. Metalorganic vapor phase epitaxy, B2. Semiconducting III–V materials, B3. Field effect transistors",
author = "Tuomas Haggren and Gaute Otnes and Renato Mour{\~a}o and Vilgaile Dagyte and Olof Hultin and Fredrik Lindel{\"o}w and Magnus Borgstr{\"o}m and Lars Samuelson",
year = "2016",
month = "10",
day = "1",
doi = "10.1016/j.jcrysgro.2016.06.020",
language = "English",
volume = "451",
pages = "18--26",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS - Lataa

TY - JOUR

T1 - InP nanowire p-type doping via Zinc indiffusion

AU - Haggren, Tuomas

AU - Otnes, Gaute

AU - Mourão, Renato

AU - Dagyte, Vilgaile

AU - Hultin, Olof

AU - Lindelöw, Fredrik

AU - Borgström, Magnus

AU - Samuelson, Lars

PY - 2016/10/1

Y1 - 2016/10/1

N2 - We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up to 1018 cm−3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

AB - We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up to 1018 cm−3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

KW - A1. Annealing

KW - A1. Diffusion

KW - A1. Doping

KW - A3. Metalorganic vapor phase epitaxy

KW - B2. Semiconducting III–V materials

KW - B3. Field effect transistors

UR - http://www.scopus.com/inward/record.url?scp=84978066023&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.06.020

DO - 10.1016/j.jcrysgro.2016.06.020

M3 - Article

VL - 451

SP - 18

EP - 26

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 6737356