Abstrakti
Additive solution process patterning, such as inkjet printing, is desirable for high-throughput roll-to-roll and sheet fabrication environments of electronics manufacturing because it can help to reduce cost by conserving active materials and circumventing multistep processing. This paper reports inkjet printing of YxAl2-xO3 gate dielectric, In2O3 semiconductor, and a polyethyleneimine-doped In2O3 interfacial charge injection layer to achieve a thin-film transistor (TFT) mobility (mu(sat)) of approximate to 1 cm(2) V-1 s(-1) at a low 3 V operating voltage. When the dielectric material is annealed at 350 degrees C, plasma treatment induces low-frequency capacitance instability, leading to overestimation of mobility. On the contrary, films annealed at 500 degrees C show stable capacitance from 1 MHz down to 0.1 Hz. This result highlights the importance of low-frequency capacitance characterization of solution-processed dielectrics, especially if plasma treatment is applied before subsequent processing steps. This study progresses metal-oxide TFT fabrication toward fully inkjet-printed thin-film electronics.
Alkuperäiskieli | Englanti |
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Artikkeli | 2100728 |
Sivumäärä | 10 |
Julkaisu | Advanced Materials Interfaces |
Vuosikerta | 8 |
Numero | 12 |
Varhainen verkossa julkaisun päivämäärä | 26 toukok. 2021 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 23 kesäk. 2021 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |
Sormenjälki
Sukella tutkimusaiheisiin 'Inkjet-Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal-Oxide Thin-Film Transistors with Low Voltage Operation'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.Laitteet
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OtaNano Nanomikroskopiakeskus
Seitsonen, J. (Manager) & Rissanen, A. (Other)
OtaNanoLaitteistot/tilat: Facility