Abstrakti
The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.
Alkuperäiskieli | Englanti |
---|---|
Artikkeli | 151908 |
Sivut | 1-3 |
Sivumäärä | 3 |
Julkaisu | Applied Physics Letters |
Vuosikerta | 90 |
Numero | 15 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 2007 |
OKM-julkaisutyyppi | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä |
Tutkimusalat
- AlGaN
- optical properties
- photoluminescence
- positron annihilation
- vacancies