Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

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@article{5f04e3972bf3480085146cddfd6f1d08,
title = "Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling",
abstract = "Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63{\%} for the DDS coupling quantum efficiency.",
keywords = "current spreading, double diode structures, electroluminescent cooling, IIIV semiconductors, quantum efficiency, radiative and non-radiative recombination",
author = "Ivan Radevici and Jonna Tiira and Toufik Sadi and Jani Oksanen",
note = "| openaire: EC/H2020/638173/EU//iTPX",
year = "2018",
month = "3",
day = "29",
doi = "10.1088/1361-6641/aab6c3",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "5",

}

RIS - Lataa

TY - JOUR

T1 - Influence of photo-generated carriers on current spreading in double diode structures for electroluminescent cooling

AU - Radevici, Ivan

AU - Tiira, Jonna

AU - Sadi, Toufik

AU - Oksanen, Jani

N1 - | openaire: EC/H2020/638173/EU//iTPX

PY - 2018/3/29

Y1 - 2018/3/29

N2 - Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

AB - Current crowding close to electrical contacts is a common challenge in all optoelectronic devices containing thin current spreading layers (CSLs). We analyze the effects of current spreading on the operation of the so-called double diode structure (DDS), consisting of a light emitting diode (LED) and a photodiode (PD) fabricated within the same epitaxial growth process, and providing an attractive platform for studying electroluminescent (EL) cooling under high bias conditions. We show that current spreading in the common n-type layer between the LED and the PD can be dramatically improved by the strong optical coupling between the diodes, as the coupling enables a photo-generated current through the PD. This reduces the current in the DDS CSL and enables the study of EL cooling using structures that are not limited by the conventional light extraction challenges encountered in normal LEDs. The current spreading in the structures is studied using optical imaging techniques, electrical measurements, simulations, as well as simple equivalent circuit models developed for this purpose. The improved current spreading leads further to a mutual dependence with the coupling efficiency, which is expected to facilitate the process of optimizing the DDS. We also report a new improved value of 63% for the DDS coupling quantum efficiency.

KW - current spreading

KW - double diode structures

KW - electroluminescent cooling

KW - IIIV semiconductors

KW - quantum efficiency

KW - radiative and non-radiative recombination

UR - http://www.scopus.com/inward/record.url?scp=85046546120&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aab6c3

DO - 10.1088/1361-6641/aab6c3

M3 - Article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 05LT01

ER -

ID: 27180667