Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Standard

Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures. / Polukhin, I. S.; Mikhailovskiy, G. A.; Rybalko, D. A.; Solov'Ev, Yu V.; Petukhov, E. P.; Odnoblyudov, M. A.; Kolodeznyi, E. S.; Mikhailov, A. K.; Bougrov, V. E.; Lipsanen, H.

julkaisussa: Materials Physics and Mechanics, Vuosikerta 29, Nro 1, 2016, s. 71-75.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Polukhin, IS, Mikhailovskiy, GA, Rybalko, DA, Solov'Ev, YV, Petukhov, EP, Odnoblyudov, MA, Kolodeznyi, ES, Mikhailov, AK, Bougrov, VE & Lipsanen, H 2016, 'Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures' Materials Physics and Mechanics, Vuosikerta. 29, Nro 1, Sivut 71-75.

APA

Polukhin, I. S., Mikhailovskiy, G. A., Rybalko, D. A., Solov'Ev, Y. V., Petukhov, E. P., Odnoblyudov, M. A., ... Lipsanen, H. (2016). Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures. Materials Physics and Mechanics, 29(1), 71-75.

Vancouver

Polukhin IS, Mikhailovskiy GA, Rybalko DA, Solov'Ev YV, Petukhov EP, Odnoblyudov MA et al. Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures. Materials Physics and Mechanics. 2016;29(1):71-75.

Author

Polukhin, I. S. ; Mikhailovskiy, G. A. ; Rybalko, D. A. ; Solov'Ev, Yu V. ; Petukhov, E. P. ; Odnoblyudov, M. A. ; Kolodeznyi, E. S. ; Mikhailov, A. K. ; Bougrov, V. E. ; Lipsanen, H. / Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures. Julkaisussa: Materials Physics and Mechanics. 2016 ; Vuosikerta 29, Nro 1. Sivut 71-75.

Bibtex - Lataa

@article{cd76f038620b4258a457d6264ededb34,
title = "Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures",
abstract = "Using developed theoretical model of mode synchronization in semiconductor passively mode locked laser (PMLL) we have calculated influence of length and relaxation rate of saturable absorber (SA) on operation regimes of PMLL. We included in consideration the influence of emission rate of free carriers from the levels of dimensional quantization in the SA and found out the optimum operating voltage for PMLL in the fundamental synchronization mode (one harmonic component) as -1.5 - -2 V with optimal length of the SA as 0.637 mm.",
author = "Polukhin, {I. S.} and Mikhailovskiy, {G. A.} and Rybalko, {D. A.} and Solov'Ev, {Yu V.} and Petukhov, {E. P.} and Odnoblyudov, {M. A.} and Kolodeznyi, {E. S.} and Mikhailov, {A. K.} and Bougrov, {V. E.} and H. Lipsanen",
year = "2016",
language = "English",
volume = "29",
pages = "71--75",
journal = "Materials Physics and Mechanics",
issn = "1605-2730",
publisher = "Institute of Problems of Mechanical Engineering",
number = "1",

}

RIS - Lataa

TY - JOUR

T1 - Influence of absorber characteristics on operation regimes of passive mode locked lasers based on InGaAlAs/InGaAs/InP heterostructures

AU - Polukhin, I. S.

AU - Mikhailovskiy, G. A.

AU - Rybalko, D. A.

AU - Solov'Ev, Yu V.

AU - Petukhov, E. P.

AU - Odnoblyudov, M. A.

AU - Kolodeznyi, E. S.

AU - Mikhailov, A. K.

AU - Bougrov, V. E.

AU - Lipsanen, H.

PY - 2016

Y1 - 2016

N2 - Using developed theoretical model of mode synchronization in semiconductor passively mode locked laser (PMLL) we have calculated influence of length and relaxation rate of saturable absorber (SA) on operation regimes of PMLL. We included in consideration the influence of emission rate of free carriers from the levels of dimensional quantization in the SA and found out the optimum operating voltage for PMLL in the fundamental synchronization mode (one harmonic component) as -1.5 - -2 V with optimal length of the SA as 0.637 mm.

AB - Using developed theoretical model of mode synchronization in semiconductor passively mode locked laser (PMLL) we have calculated influence of length and relaxation rate of saturable absorber (SA) on operation regimes of PMLL. We included in consideration the influence of emission rate of free carriers from the levels of dimensional quantization in the SA and found out the optimum operating voltage for PMLL in the fundamental synchronization mode (one harmonic component) as -1.5 - -2 V with optimal length of the SA as 0.637 mm.

UR - http://www.scopus.com/inward/record.url?scp=85002410801&partnerID=8YFLogxK

M3 - Article

VL - 29

SP - 71

EP - 75

JO - Materials Physics and Mechanics

JF - Materials Physics and Mechanics

SN - 1605-2730

IS - 1

ER -

ID: 10713663