In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

Outi Reentilä, Marco Mattila, Lauri Knuuttila, Teppo Hakkarainen, Markku Sopanen, Harri Lipsanen

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2006
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japani, 22-26.5.2006

Siteeraa tätä

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title = "In-situ reflectance monitoring of InGaAsN quantum well growth with H\_2 and N\_2 as carrier gases",

author = "Outi Reentil{\"a} and Marco Mattila and Lauri Knuuttila and Teppo Hakkarainen and Markku Sopanen and Harri Lipsanen",

year = "2006",

language = "English",

series = "13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japani, 22-26.5.2006",

type = "WorkingPaper",

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TY - UNPB

T1 - In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

AU - Reentilä, Outi

AU - Mattila, Marco

AU - Knuuttila, Lauri

AU - Hakkarainen, Teppo

AU - Sopanen, Markku

AU - Lipsanen, Harri

PY - 2006

Y1 - 2006

M3 - Working paper

T3 - 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japani, 22-26.5.2006

BT - In-situ reflectance monitoring of InGaAsN quantum well growth with H_2 and N_2 as carrier gases

ER -