In (Ga)As quantum dots on Ge substrate

L. Knuuttila; K. Kainu; M. Sopanen; H. Lipsanen

In (Ga)As quantum dots on Ge substrate

L. Knuuttila, K. Kainu, M. Sopanen, H. Lipsanen

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Sivut	217-220
Tila	Julkaistu - 2002
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002

Tutkimusalat

semiconductors
synchrotron x-ray topography

Siteeraa tätä

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title = "In (Ga)As quantum dots on Ge substrate",

keywords = "semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography, semiconductors, synchrotron x-ray topography",

author = "L. Knuuttila and K. Kainu and M. Sopanen and H. Lipsanen",

year = "2002",

language = "English",

series = "The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002",

pages = "217--220",

type = "WorkingPaper",

}

TY - UNPB

T1 - In (Ga)As quantum dots on Ge substrate

AU - Knuuttila, L.

AU - Kainu, K.

AU - Sopanen, M.

AU - Lipsanen, H.

PY - 2002

Y1 - 2002

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

KW - semiconductors

KW - synchrotron x-ray topography

M3 - Working paper

T3 - The 4th International Conference on Materials for Microelectronics and Nanoengineering ICMMN-4, Espoo, Finland, 10-12 June, 2002

SP - 217

EP - 220

BT - In (Ga)As quantum dots on Ge substrate

ER -