Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin; L. E. Vorobjev; D. A. Firsov; V. Yu Panevin; A. N. Sofronov; G. A. Melentyev; A. V. Antonov; V. I. Gavrilenko; A. V. Andrianov; A. O. Zakharyin; S. Suihkonen; Pekka Törmä; M. Ali; H. Lipsanen

doi:10.1063/1.3272019

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

V. A. Shalygin, L. E. Vorobjev, D. A. Firsov, V. Yu Panevin, A. N. Sofronov, G. A. Melentyev, A. V. Antonov, V. I. Gavrilenko, A. V. Andrianov, A. O. Zakharyin, S. Suihkonen, Pekka Törmä, M. Ali, H. Lipsanen

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

27 Sitaatiot (Scopus)

146 Lataukset (Pure)

Abstrakti

We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 10¹⁶ to 3.4× 10¹⁸ cm^-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

Alkuperäiskieli	Englanti
Artikkeli	123523
Sivut	1-5
Sivumäärä	5
Julkaisu	Journal of Applied Physics
Vuosikerta	106
Numero	12
DOI - pysyväislinkit	https://doi.org/10.1063/1.3272019
Tila	Julkaistu - 2009
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Pääsy asiakirjaan

10.1063/1.3272019

1.3272019Final published version, 412 KB

OpenUrl-saatavuus

Koko teksti

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

Shalygin, V. A., Vorobjev, L. E., Firsov, D. A., Panevin, V. Y., Sofronov, A. N., Melentyev, G. A., Antonov, A. V., Gavrilenko, V. I., Andrianov, A. V., Zakharyin, A. O., Suihkonen, S., Törmä, P., Ali, M., & Lipsanen, H. (2009). Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. Journal of Applied Physics, 106(12), 1-5. [123523]. https://doi.org/10.1063/1.3272019

@article{ba295ac05f4243c1b79f97de127372ec,

title = "Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field",

abstract = "We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.",

author = "Shalygin, {V. A.} and Vorobjev, {L. E.} and Firsov, {D. A.} and Panevin, {V. Yu} and Sofronov, {A. N.} and Melentyev, {G. A.} and Antonov, {A. V.} and Gavrilenko, {V. I.} and Andrianov, {A. V.} and Zakharyin, {A. O.} and S. Suihkonen and Pekka T{\"o}rm{\"a} and M. Ali and H. Lipsanen",

year = "2009",

doi = "10.1063/1.3272019",

language = "English",

volume = "106",

pages = "1--5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

Shalygin, VA, Vorobjev, LE, Firsov, DA, Panevin, VY, Sofronov, AN, Melentyev, GA, Antonov, AV, Gavrilenko, VI, Andrianov, AV, Zakharyin, AO, Suihkonen, S, Törmä, P, Ali, M & Lipsanen, H 2009, 'Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field', Journal of Applied Physics, Vuosikerta 106, Nro 12, 123523, Sivut 1-5. https://doi.org/10.1063/1.3272019

TY - JOUR

T1 - Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

AU - Shalygin, V. A.

AU - Vorobjev, L. E.

AU - Firsov, D. A.

AU - Panevin, V. Yu

AU - Sofronov, A. N.

AU - Melentyev, G. A.

AU - Antonov, A. V.

AU - Gavrilenko, V. I.

AU - Andrianov, A. V.

AU - Zakharyin, A. O.

AU - Suihkonen, S.

AU - Törmä, Pekka

AU - Ali, M.

AU - Lipsanen, H.

PY - 2009

Y1 - 2009

N2 - We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

AB - We report on the observation and experimental studies of impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field. The terahertz electroluminescence is observed in a wide range of doping levels (at noncompensated donor density from 4.5× 1016 to 3.4× 1018 cm-3). Spectra of terahertz luminescence and photoconductivity are studied by means of Fourier transform spectrometry. Distinctive features of the spectra can be assigned to intracenter electron transitions between excited and ground states of silicon and oxygen donors and to hot electron transitions to the donor states.

UR - http://www.scopus.com/inward/record.url?scp=73849138479&partnerID=8YFLogxK

U2 - 10.1063/1.3272019

DO - 10.1063/1.3272019

M3 - Article

AN - SCOPUS:73849138479

VL - 106

SP - 1

EP - 5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 123523

ER -

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

Abstrakti

Pääsy asiakirjaan

OpenUrl-saatavuus

Muut tiedostot ja linkit

Sormenjälki

Siteeraa tätä