Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

E. P. O'Reilly; S. Schulz; D. Tanner; C. Coughlan; Miguel A. Caro

doi:10.1109/NUSOD.2015.7292847

Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

E. P. O'Reilly, S. Schulz, D. Tanner, C. Coughlan, Miguel A. Caro

Sähkötekniikan ja automaation laitos

Univ Coll Cork UCC

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

2 Sitaatiot (Scopus)

Abstrakti

We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.

Alkuperäiskieli	Englanti
Otsikko	15th International Conference on Numerical Simulation of Optoelectronic Devices
Alaotsikko	NUSOD 2015
Kustantaja	IEEE
Sivut	111-112
Sivumäärä	2
Vuosikerta	2015-May
ISBN (elektroninen)	9781479983797
DOI - pysyväislinkit	https://doi.org/10.1109/NUSOD.2015.7292847
Tila	Julkaistu - 10 toukok. 2015
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Numerical Simulation of Optoelectronic Devices - Taipei, Taiwan Kesto: 7 syysk. 2015 → 11 syysk. 2015 Konferenssinumero: 15

Julkaisusarja

Nimi	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices
ISSN (painettu)	2158-3234
ISSN (elektroninen)	2158-3242

Conference

Conference	International Conference on Numerical Simulation of Optoelectronic Devices
Lyhennettä	NUSOD
Maa/Alue	Taiwan
Kaupunki	Taipei
Ajanjakso	07/09/2015 → 11/09/2015

Pääsy asiakirjaan

10.1109/NUSOD.2015.7292847

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

O'Reilly, E. P., Schulz, S., Tanner, D., Coughlan, C., & Caro, M. A. (2015). Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. teoksessa 15th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2015 (Vuosikerta 2015-May, Sivut 111-112). Artikkeli 7292847 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices). IEEE. https://doi.org/10.1109/NUSOD.2015.7292847

O'Reilly, E. P. ; Schulz, S. ; Tanner, D. et al. / Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. 15th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2015. Vuosikerta 2015-May IEEE, 2015. Sivut 111-112 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices).

@inproceedings{8b9b69a79dfe4a308cb8394652cd1b5e,

title = "Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys",

abstract = "We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.",

keywords = "atomistic models, carrier localization, InAlN, InGaN quantum wells",

author = "O'Reilly, {E. P.} and S. Schulz and D. Tanner and C. Coughlan and Caro, {Miguel A.}",

year = "2015",

month = may,

day = "10",

doi = "10.1109/NUSOD.2015.7292847",

language = "English",

volume = "2015-May",

series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices",

publisher = "IEEE",

pages = "111--112",

booktitle = "15th International Conference on Numerical Simulation of Optoelectronic Devices",

address = "United States",

note = "International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD ; Conference date: 07-09-2015 Through 11-09-2015",

}

O'Reilly, EP, Schulz, S, Tanner, D, Coughlan, C & Caro, MA 2015, Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. julkaisussa 15th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2015. Vuosikerta 2015-May, 7292847, Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, IEEE, Sivut 111-112, International Conference on Numerical Simulation of Optoelectronic Devices, Taipei, Taiwan, 07/09/2015. https://doi.org/10.1109/NUSOD.2015.7292847

Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. / O'Reilly, E. P.; Schulz, S.; Tanner, D. et al.
15th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2015. Vuosikerta 2015-May IEEE, 2015. s. 111-112 7292847 (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

AU - O'Reilly, E. P.

AU - Schulz, S.

AU - Tanner, D.

AU - Coughlan, C.

AU - Caro, Miguel A.

N1 - Conference code: 15

PY - 2015/5/10

Y1 - 2015/5/10

N2 - We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.

AB - We overview the impact of random alloy fluctuations on the electronic properties of InAlN and InGaN systems. Both density functional theory and empirical atomistic approaches have been applied. We describe our empirical atomistic approach to describe the electronic structure of III-N alloys and quantum wells (QWs). We show that random alloy fluctuations lead to wave function localization effects in the electronic structure of InAlN and InGaN alloys and QWs.

KW - atomistic models

KW - carrier localization

KW - InAlN

KW - InGaN quantum wells

UR - http://www.scopus.com/inward/record.url?scp=84959221903&partnerID=8YFLogxK

U2 - 10.1109/NUSOD.2015.7292847

DO - 10.1109/NUSOD.2015.7292847

M3 - Conference article in proceedings

AN - SCOPUS:84959221903

VL - 2015-May

T3 - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices

SP - 111

EP - 112

BT - 15th International Conference on Numerical Simulation of Optoelectronic Devices

PB - IEEE

T2 - International Conference on Numerical Simulation of Optoelectronic Devices

Y2 - 7 September 2015 through 11 September 2015

ER -

O'Reilly EP, Schulz S, Tanner D, Coughlan C, Caro MA. Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys. julkaisussa 15th International Conference on Numerical Simulation of Optoelectronic Devices: NUSOD 2015. Vuosikerta 2015-May. IEEE. 2015. s. 111-112. 7292847. (Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices). doi: 10.1109/NUSOD.2015.7292847

Impact of random composition fluctuations on electron and hole states in InAlN and InGaN alloys

Abstrakti

Julkaisusarja

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