Identification of the VAl-ON defect complex in AlN single crystals

Tutkimustuotos: Lehtiartikkeli

Tutkijat

Organisaatiot

  • University of Helsinki
  • GaN-Crystals Ltd.
  • N-Crystals Group

Kuvaus

In this Rapid Communication, we report positron annihilation results on in-grown and proton irradiation-induced vacancies and their decoration in aluminium nitride (AlN) single crystals. By combining positron lifetime and coincidence Doppler measurements with ab initio calculations, we identify in-grown VAl-ON complexes in the concentration range 1018 cm-3 as the dominant form of VAl in the AlN single crystals, while isolated VAl were introduced by irradiation. Further, we identify the UV absorption feature at around 360 nm that involves V Al. © 2011 American Physical Society.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli081204
Sivut1_5
Sivumäärä4
JulkaisuPhysical Review B
Vuosikerta84
Numero8
TilaJulkaistu - 29 elokuuta 2011
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • absorption, AlN, positron, vacancy

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