Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating

Orysia T. Zaremba; Anastasia E. Goldt; Eldar M. Khabushev; Anton S. Anisimov; Albert G. Nasibulin

doi:10.1016/j.mseb.2022.115648

Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating

Orysia T. Zaremba
, Anastasia E. Goldt^*
, Eldar M. Khabushev
, Anton S. Anisimov
, Albert G. Nasibulin^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

20 Sitaatiot (Scopus)

216 Lataukset (Pure)

Abstrakti

Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl₄ solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.

Alkuperäiskieli	Englanti
Artikkeli	115648
Sivumäärä	7
Julkaisu	Materials Science and Engineering B: Advanced Functional Solid-State Materials
Vuosikerta	278
Varhainen verkossa julkaisun päivämäärä	17 helmik. 2022
DOI - pysyväislinkit	https://doi.org/10.1016/j.mseb.2022.115648
Tila	Julkaistu - huhtik. 2022
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

We thank Stepan Romanov for in situ measurements of SWCNT film resistance during dip-coating process. This work is supported by the Russian Science Foundation (RSF) under grant number 17-19-01787 (dip-coating doping results) and the Ministry of Science and Higher Education of the Russian Federation (project no. FZSR-2020-0007 in the framework of the state assignment no. 075-03-2020-097/1). The authors thank the Council on grants of the President of the Russian Federation grant number НШ-1330.2022.1.3.

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@article{03c72431ea2640c0b2c1f4c6458ec534,

title = "Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating",

abstract = "Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl4 solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90\% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.",

keywords = "Dip-coating, Doping, HAuCl, In situ sheet resistance measurement, SWCNTs, TCFs",

author = "Zaremba, \{Orysia T.\} and Goldt, \{Anastasia E.\} and Khabushev, \{Eldar M.\} and Anisimov, \{Anton S.\} and Nasibulin, \{Albert G.\}",

note = "Funding Information: We thank Stepan Romanov for in situ measurements of SWCNT film resistance during dip-coating process. This work is supported by the Russian Science Foundation (RSF) under grant number 17-19-01787 (dip-coating doping results) and the Ministry of Science and Higher Education of the Russian Federation (project no. FZSR-2020-0007 in the framework of the state assignment no. 075-03-2020-097/1). The authors thank the Council on grants of the President of the Russian Federation grant number НШ-1330.2022.1.3. Publisher Copyright: {\textcopyright} 2022 The Authors",

year = "2022",

month = apr,

doi = "10.1016/j.mseb.2022.115648",

language = "English",

volume = "278",

journal = "Materials Science and Engineering B: Advanced Functional Solid-State Materials",

issn = "0921-5107",

publisher = "Elsevier",

}

TY - JOUR

T1 - Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating

AU - Zaremba, Orysia T.

AU - Goldt, Anastasia E.

AU - Khabushev, Eldar M.

AU - Anisimov, Anton S.

AU - Nasibulin, Albert G.

N1 - Funding Information: We thank Stepan Romanov for in situ measurements of SWCNT film resistance during dip-coating process. This work is supported by the Russian Science Foundation (RSF) under grant number 17-19-01787 (dip-coating doping results) and the Ministry of Science and Higher Education of the Russian Federation (project no. FZSR-2020-0007 in the framework of the state assignment no. 075-03-2020-097/1). The authors thank the Council on grants of the President of the Russian Federation grant number НШ-1330.2022.1.3. Publisher Copyright: © 2022 The Authors

PY - 2022/4

Y1 - 2022/4

N2 - Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl4 solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.

AB - Single-walled carbon nanotube (SWCNT) based transparent and conductive films (TCFs) are one of the most prospective materials for novel flexible and stretchable electronic devices. Development of reproducible and scalable doping procedure is the key step towards the widespread implementation of SWCNT TCFs. Here, we thoroughly investigate a dip-coating technique for SWCNT doping as a promising approach for the practical manufacturing of SWCNT films with high performance. We examine the effect of dip-coating parameters on optical and electrical properties of the films using HAuCl4 solution in isopropyl alcohol (IPA) and in situ investigate doping effects. This method appeared to easily fine-tune the optoelectronic parameters of SWCNT films and achieve a record sheet resistance value of 36 Ohm/sq. at the 90% transmittance in the middle of visible spectral range by increasing a work function value from 4.8 (for pristine SWCNTs) to 6.0 eV. The proposed approach allows efficient, uniform, and reproducible fabrication of highly conductive and transparent SWCNT films and opens an avenue for precise tailoring of SWCNT Fermi level for optoelectronic devices.

KW - Dip-coating

KW - Doping

KW - HAuCl

KW - In situ sheet resistance measurement

KW - SWCNTs

KW - TCFs

UR - https://www.scopus.com/pages/publications/85125856490

U2 - 10.1016/j.mseb.2022.115648

DO - 10.1016/j.mseb.2022.115648

M3 - Article

AN - SCOPUS:85125856490

SN - 0921-5107

VL - 278

JO - Materials Science and Engineering B: Advanced Functional Solid-State Materials

JF - Materials Science and Engineering B: Advanced Functional Solid-State Materials

M1 - 115648

ER -

Highly efficient doping of carbon nanotube films with chloroauric acid by dip-coating

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